IXFX24N100F IXYS Corporation, IXFX24N100F Datasheet
IXFX24N100F
Manufacturer Part Number
IXFX24N100F
Description
1000V HiPerRF power MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXFX24N100F.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFX24N100F
Manufacturer:
IXYS
Quantity:
35 500
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
d
DSS
DS(on)
Test Conditions
V
Test Conditions
V
S
J
J
C
C
C
C
C
J
C
GS
DS
GS
GS
GS
DS
= V
= 0 V, I
TM
DM
GS
rr
DSS
, I
D
D
= 8mA
= 1mA
D
G
DS
g
, Low Intrinsic R
D25
GS
DD
Advance Technical Information
J
J
J
DSS
JM
g
1000
min.
3.0
IXFK 24N100F I
IXFX 24N100F V
Characteristic Values
Maximum Ratings
typ.
max.
5.5 V
V
PLUS 247
Features
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
TO-264 AA (IXFK)
G = Gate
S = Source
R
RF capable MOSFETs
Double metal process for low gate
resistance
Low package inductance
- easy to drive and to protect
t
D25
rr
DSS
DS(on)
250 ns
G
TM
(IXFX)
D
TM
= 1000 V
=
= 0.39
G
D
S
D = Drain
TAB = Drain
24 A
98874 (1/02)
(TAB)
(TAB)
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IXFX24N100F Summary of contents
Page 1
... DS(on) t 250 ns rr PLUS 247 TM (IXFX TO-264 AA (IXFK Gate D = Drain S = Source TAB = Drain Features l RF capable MOSFETs l Double metal process for low gate resistance l l Low package inductance - easy to drive and to protect l Applications 5.5 V Advantages l TM ...
Page 2
Symbol Test Conditions D25 C iss C oss rss t d(on d(off g(on thJC R thCK Source-Drain ...