IXTA110N055PSN IXYS Corporation, IXTA110N055PSN Datasheet - Page 4

• Manufacturer Part Number: IXTA110N055PSN
• Description: Transistor Mosfet N-CH 55V 110A 3TO-263
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
250
225
200
175
150
125
100
300
250
200
150
100
100
75
50
25
50
0
0
0.4
2
0
T
J
= 150
f = 1MHz
0.6
3
5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
º
Fig. 9. Source Current vs.
Source-To-Drain Voltage
C
4
0.8
10
5
V
V
15
1
T
V
G S
S D
J
DS
= 25
6
- Volts
- Volts
1.2
20
- Volts
T
º
C
J
7
= -40
4,850,072
4,835,592
150
1.4
25
25
º
º
º
8
C
C
C
1.6
30
4,931,844
4,881,106
9
C rss
C iss
C oss
1.8
35
1 0
5,034,796
5,017,508
40
2
1 1
5,049,961
5,063,307
1000
100
50
45
40
35
30
25
20
15
10
10
10
IXTA 110N055P IXTP 110N055P
5
0
9
8
7
6
5
4
3
2
1
0
5,237,481
5,187,117
0
0
1
V
I
I
R
D
G
DS
DS(on)
10
= 55A
= 10mA
5,381,025
Fig. 8. Transconductance
5,486,715
50
= 22.5V
Fig. 10. Gate Charge
Limit
Fig. 12. Forw ard-Bias
20
Safe Operating Area
Q
100
6,306,728B1
6,404,065B1
G
I
30
- nanoCoulombs
D
V
- Amperes
D S
DC
150
40
10
- Volts
IXTQ 110N055P
6,162,665
6,259,123B1 6,306,728B1 6,683,344
50
200
T
T
J
C
6,534,343
60
T
= 175
= 25
J
= -40
250
150
25
º
º
C
70
C
º
º
º
C
1ms
C
25µs
100µs
10ms
C
6,583,505
300
100
80