IXTA75N10PSN IXYS Corporation, IXTA75N10PSN Datasheet
IXTA75N10PSN
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IXTA75N10PSN Summary of contents
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PolarHT TM Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions 25°C to 175°C DSS 25°C to 175°C; R DGR J V GSM 25°C D25 25°C, pulse ...
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... F -di/dt = 100 A/µ TO-263 (IXTP) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 20 ...
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Fig. 1. Output Characteristics @ 10V 0.3 0.6 0.9 1 Volts D S Fig. 3. Output Characteristics @ 125 10V ...
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... S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25ºC 4 -40ºC 0 ...
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Fig . ...