IXTH100N25P IXYS Corporation, IXTH100N25P Datasheet - Page 2

• Manufacturer Part Number: IXTH100N25P
• Description: Transistor Mosfet N-CH 250V 100A 3TO-247
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
d(on)
d(off)
f
S
SM
r
rr
TO-264 Outline
fs
thCK
SD
iss
oss
rss
g(on)
gs
gd
thJC
thCK
IXYS MOSFETs and IGBTs are covered by one or more
RM
of the following U.S. patents:
Test Conditions
V
V
V
R
V
TO-3P
TO-264
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/µs
V
F
F
DS
GS
GS
G
GS
GS
R
= I
= 25 A
= 100 V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
D25
, pulse test
DSS
DSS
, I
, I
D
D
= 0.5 I
= I
(T
(T
D25
J
J
= 25°C, unless otherwise specified)
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
= 25°C, unless otherwise specified)
D25
Min.
Min.
40
Characteristic Values
Characteristic Values
6300
1150
Typ.
0.21
0.15
240
100
185
typ.
200
3.0
56
25
26
28
43
91
0.21 K/W
Max.
Max.
100
250
1.5
IXTQ 100N25P IXTT 100N25P
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
TO-3P Outline
TO-268 Outline
1
IXTK 100N25P
2
3
6,534,343