IXTH12N120SN IXYS Corporation, IXTH12N120SN Datasheet
IXTH12N120SN
Manufacturer Part Number
IXTH12N120SN
Description
Transistor Mosfet N-CH 1200V 12A 3TO-247 AD
Manufacturer
IXYS Corporation
Datasheet
1.IXTH12N120SN.pdf
(4 pages)
© 2004 IXYS All rights reserved
Power MOSFET, Avalanche Rated
High Voltage
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
Mounting torque
J
J
C
C
C
C
C
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
GS
DSS
, I
D
D
DC
= 1 mA
D
= 250 µA
, V
= 0.5 • I
DS
= 0
GS
D25
= 1 MΩ
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
JM
IXTH 12N120
1200
min.
Characteristic Values
3
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1200
1200
±30
±40
500
150
300
1.0
12
48
12
30
6
max.
±100
1.4
25
5
3
mJ
mA
nA
µA
°C
°C
°C
°C
Ω
W
V
V
V
V
V
V
A
A
A
g
J
Features
Applications
Advantages
TO-247 AD
G = Gate,
S = Source,
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
I
R
D (cont)
DSS
DS(on)
DS (on)
HDMOS
=
= 1200 V
=
D = Drain,
TAB = Drain
TM
1.4 Ω Ω Ω Ω Ω
process
DS98937E(04/04)
12 A
D (TAB)
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IXTH12N120SN Summary of contents
Page 1
Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR Continuous GS V Transient GSM 25°C ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...
Page 3
Fig. 1. Output Characteristics @ 10V 7. Volts D S Fig. 3. Output Characteristics @ ...
Page 4
Fig. 7. Input Adm ittance 125º 25ºC -40º 4 Volts G S Fig. 9. Source Current vs. Source -To-Drain Voltage ...