FPD1500SOT89 Filtronic, FPD1500SOT89 Datasheet

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FPD1500SOT89

Manufacturer Part Number
FPD1500SOT89
Description
Low Noise High Linearity Packaged pHEMTt
Manufacturer
Filtronic
Datasheet

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• PERFORMANCE (1850 MHz)
• DESCRIPTION AND APPLICATIONS
• ELECTRICAL SPECIFICATIONS AT 22°C
Phone: +1 408 850-5790
Fax: +1 408 850-5766
Output Third-Order Intercept Point
♦ 27.5 dBm Output Power (P
♦ 17 dB Small-Signal Gain (SSG)
♦ 1.2 dB Noise Figure
♦ 42 dBm Output IP3
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Available in Lead Free Finish: FPD1500SOT89E
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by high-
resolution stepper-based photolithography.
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD1500 is available in die form and in other
packages. Typical applications include drivers or output stages in PCS/Cellular base station high-
intercept-point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
Power at 1dB Gain Compression
Gate-Source Breakdown Voltage
Maximum Drain-Source Current
Saturated Drain-Source Current
Gate-Drain Breakdown Voltage
Gate-Source Leakage Current
(from 15 to 5 dB below P
Power-Added Efficiency
Small-Signal Gain
Pinch-Off Voltage
Transconductance
Noise Figure
P
Parameter
OUT
= P
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
1dB
1dB
)
1dB
Symbol
|V
|V
http://www.filtronic.co.uk/semis
SSG
PAE
I
P
I
I
|V
IP3
NF
G
MAX
BDGD
GSO
BDGS
DSS
)
1dB
M
P
|
|
|
Matched for best IP3 at 50% I
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
V
DS
Matched for best P
DS
DS
DS
= 5.0V; I
= 5.0V; I
= 5.0V; I
= 5.0V; I
= 5.0V; I
= 1.3 V; I
The recessed and offset Gate structure minimizes
Test Conditions
= 1.3 V; V
= 1.3 V; V
= 1.3 V; V
I
I
GD
GS
V
GS
= 1.5 mA
= 1.5 mA
= -5 V
DS
DS
DS
DS
DS
L
DS
OW
= 50% I
= 50% I
= 50% I
= 50% I
= 50% I
GS
GS
GS
= 1.5 mA
≅ +1 V
= 0 V
N
= 0 V
1dB
OISE
DSS
DSS
DSS
DSS
DSS
, H
DSS
IGH
Min
26.0
15.5
375
0.7
L
38
12
12
INEARITY
FPD1500SOT89
Typ
27.5
465
750
400
1.2
1.0
17
50
40
42
16
16
1
Revised11/11/05
Email: sales@filcsi.com
P
ACKAGED
Max
550
1.5
1.3
15
PHEMTT
Units
dBm
dBm
mA
mA
mS
μA
dB
dB
%
V
V
V

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FPD1500SOT89 Summary of contents

Page 1

... Evaluation Boards Available ♦ Available in Lead Free Finish: FPD1500SOT89E • DESCRIPTION AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by high- resolution stepper-based photolithography. parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels ...

Page 2

... RF Output Power OUT P = 2.3W – (0.015W/° TOT PACK where T = source tab lead temperature above 22 PACK (coefficient of de-rating formula is the Thermal Conductivity) = 2.3W – (0.015 x (65 – 22)) = 1.66W TOT http://www.filtronic.co.uk/semis FPD1500SOT89 , OISE IGH INEARITY ACKAGED Min Max < +0V 8 < +8V -3 > ...

Page 3

... Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD1500SOT89. Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 2.6 Ω ...

Page 4

... Fax: +1 408 850-5766 L OW Power Transfer Characteristic Pout Comp Point 0.00 2.00 4.00 6.00 8.00 10.00 Input Power (dBm) Drain Efficiency and PAE PAE Eff. 0.00 2.00 4.00 6.00 8.00 10.00 Input Power (dBm test frequency of 2 GHz. The test devices DS DSS http://www.filtronic.co.uk/semis FPD1500SOT89 OISE IGH INEARITY ACKAGED 3.50 3.00 2.50 2.00 1.50 1.00 .50 .00 -.50 12.00 14.00 16.00 70.00% 60.00% 50.00% 40.00% 30.00% 20.00% 10.00% ...

Page 5

... Phone: +1 408 850-5790 Fax: +1 408 850-5766 L OW Typical Intermodulation Performance VDS = 5V IDS = 50% IDSS 1.85GHz 1.00 3.00 5.00 7.00 Input Power (dBm) . This IMD enhancement is affected by the quiescent bias current, the Maximum Stable Gain & S FPD1500SOT89 5V / 50%IDSS 2.5 3.5 4.5 Frequency (GHz) http://www.filtronic.co.uk/semis FPD1500SOT89 OISE IGH ...

Page 6

... Swp Min http://www.filtronic.co.uk/semis FPD1500SOT89 OISE IGH INEARITY ACKAGED 1850 MHz Contours swept with a constant input power, set so that nominal P is achieved at the point of 1dB optimum output match. Input (Source plane) Γ 0.74 ∠ 168.2º ...

Page 7

... TYPICAL SCATTERING PARAMETERS (50Ω SYSTEM) • See Website “More Info” for S-parameter design files. Phone: +1 408 850-5790 Fax: +1 408 850-5766 L OW FPD1500SOT89 5V / 50%IDSS 6 GHz 5 GHz 4 GHz 3.5 GHz 3 GHz 2.5 GHz 2 GHz 1.5 GHz 1 GHz S11 FPD1500SOT89 5V / 50%IDSS 0.4 6 GHz 5 GHz ...

Page 8

... P ; specifically a linear regression analysis shows r DSS 1dB fails the F-statistic test. I DSS with the quiescent operating point I Phone: +1 408 850-5790 Fax: +1 408 850-5766 Curves FPD1500SOT89 1.5 2.0 2.5 3.0 3.5 4.0 Drain-Source Voltage ( any particular I DSS > 1.3V will generally cause errors in the current measurements, ...

Page 9

... MLIN ID= TL7 mil mil MTEE ID= TL12 W1= 98 mil W2= 98 mil SUBCKT W3= 40 mil ID= S1 NET= "FPD1500SOT89" http://www.filtronic.co.uk/semis FPD1500SOT89 OISE IGH INEARITY ACKAGED Component Values 0.9GHz Lg 47nH Ld 47nH L1 12nH L2 4.7nH C1 5.6pF on both sides Vd + 1.0uF + 0.01uF ...

Page 10

... MLIN ID= TL7 mil mil MTEE ID= TL12 W1= 98 mil W2= 98 mil SUBCKT W3= 40 mil ID= S1 NET= "FPD1500SOT89" http://www.filtronic.co.uk/semis FPD1500SOT89 OISE IGH INEARITY ACKAGED Component Values 2.4GHz Lg 22nH Ld 22nH L1 1.0nH L2 3.3nH C1 1.8pF C2 1.0pF on both sides Vd + 1.0uF + 0 ...

Page 11

... Phone: +1 408 850-5790 Fax: +1 408 850-5766 Gain (dB (dBm) P 1dB = 4.5V Median Standard Deviation 15.5 0.20 0.91 0.03 25.2 0.25 38.7 1.1 http://www.filtronic.co.uk/semis FPD1500SOT89 OISE IGH INEARITY ACKAGED Noise Figure 6000 5000 4000 3000 2000 1000 0 0.6 0.7 0.8 0.9 1 1.1 rd Output 3 -Order Intercept Point 6000 5000 ...

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