FPD2000AS-EB Filtronic, FPD2000AS-EB Datasheet

no-image

FPD2000AS-EB

Manufacturer Part Number
FPD2000AS-EB
Description
2W PACKAGED POWER PHEMT
Manufacturer
Filtronic
Datasheet
2W P
F
G
The FPD2000AS is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron
optimized for power applications in L-Band.
The
optimized for low parasitics.
E
Note: T
Thermal Resistance (channel-to-case)
Power Gain at dB Gain Compression
3rd-Order Intermodulation Distortion
EATURES
LECTRICAL
ENERAL
Power at 1dB Gain Compression
Gate-Source Breakdown Voltage
Tel: +44 (0) 1325 301111
Saturated Drain-Source Current
Maximum Drain-Source Current
Gate-Drain Breakdown Voltage
Gate-Source Leakage Current
33 dBm Output Power (P1dB) @1.8GHz
14 dB Power Gain (G1dB) @1.8GHz
46 dBm Output IP3
10V Operation
50% Power-Added Efficiency
Evaluation Boards Available
Usable Gain to 4GHz
at 1dB Gain Compression
Power-Added Efficiency
Maximum Stable Gain
AMBIENT
surface-mount
Transconductance
P
Pinch-Off Voltage
ARAMETER
ACKAGED
S21/S12
D
:
Mobility
ESCRIPTION
= 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
S
PECIFICATIONS
Transistor
package
P
:
OWER P
Fax: +44 (0) 1325 306177
S
|VBDGS|
|VBDGD|
YMBOL
G1dB
P1dB
IMAX
IGSO
MSG
IDSS
ΘCC
PAE
|VP|
IM3
GM
Specifications subject to change without notice
:
Filtronic Compound Semiconductors Ltd
has
(pHEMT),
HEMT
been
ΓS and ΓL tuned for Optimum IP3
ΓS and ΓL tuned for Optimum IP3
ΓS and ΓL tuned for Optimum IP3
ΓS and ΓL tuned for Optimum IP3
See Note on following page
VDS = 10V; IDS = 350 mA
VDS = 10V; IDS = 350 mA
VDS = 10 V; IDS = 350 mA
VDS = 10V; IDS = 350 mA
VDS = 10V; IDS = 350 mA
PIN = 0dBm, 50Ω system
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; IDS = 4 mA
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS = 0 V
C
POUT = 22 dBm
ONDITIONS
IGS = 4 mA
IGD = 4 mA
VGS = -3 V
1
Email: sales@filcs.com
P
T
YPICAL
ACKAGE
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
Power applications in WLL/WLAN and
WiMax (3.5GHz) amplifiers
A
:
PPLICATIONS
M
12.5
0.7
32
20
6
IN
Website:
FPD2000AS
T
1150
1800
1200
14.0
-47
0.9
33
20
45
35
20
YP
:
www.filtronic.com
M
1.4
85
AX
Datasheet v3.0
U
°C/W
dBm
NITS
dBc
mA
mA
mS
dB
µA
%
V
V
V

Related parts for FPD2000AS-EB

FPD2000AS-EB Summary of contents

Page 1

... Operation • 50% Power-Added Efficiency • Evaluation Boards Available • Usable Gain to 4GHz ENERAL ESCRIPTION The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor optimized for power applications in L-Band. The surface-mount package optimized for low parasitics LECTRICAL ...

Page 2

... Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD2000AS. • The recommended 350mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. ...

Page 3

... VGS = -1.0V VGS = -1.25V .000 0.00 1.00 2.00 3.00 4.00 5.00 6.00 Drain-Source Voltage (V) FPD2000AS POWER CONTOURS 2 GHz Pout_dBm = 22 dBm Pout_dBm = 24 dBm NOTE: Power contours measured at constant input power, level set to meet nominal P rating at optimum match 1dB point. Optimum match: Γ – j6 Ω and Γ – j3 Ω S ...

Page 4

... YPICAL EASURED ERFORMANCE Note: Measurement Conditions T FPD2000AS at VDS = 10V and IDS = 350mA 30.0 25.0 20.0 15.0 S21 MSG 10.0 5.0 0.0 0 500 1000 1500 2000 Frequency (MHz ACKAGE UTLINE ND (dimensions in millimeters – mm) 1.9±0.25 0.35 2 Plcs. 1.3 2 Plcs. All Dimnesions in mm General Tolerance: .xx ± 0.05 .x ± 0.15 For best positional accuracy in auto pick and place ...

Page 5

... R D (3.4 – 3.5GH EFERENCE ESIGN P ARAMETER Frequency Gain P1dB IM3 @22dBm Pout SCL S11 S22 CHEMATIC FPD2000AS EVAL Board Schematic Z1 15pF (50 Ohm) Z1 Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 ): Z U NIT GHz ...

Page 6

... B L (3.4 – 3.5GH OAR D AYOUT RF IN NOTE: AutoCAD™ drawing available on request Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 ): Z EV-SP-000044-001 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2000AS Datasheet v3.0 VD Website: www.filtronic.com ...

Page 7

... Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2000AS Datasheet v3.0 S12ANG S22MAG S22ANG 23.09 0.41 -163.97 21.17 0.41 -168.16 20.24 0.42 -171.39 19.30 0.42 -174.09 18.90 0.42 -176.33 18.57 0.42 -178.37 18.50 0.42 179.80 18.46 0.42 178.18 18.41 0.43 176.66 18.34 0.43 175.27 18.30 0.43 173.92 18.25 0.43 172.69 18.34 0.43 171.34 18.22 0.43 170.15 18.00 0.43 168.95 18.00 0.43 167.90 18.01 0.43 166.84 17.70 0.43 165.65 17.42 0.43 164.73 17.44 0.43 163.72 16.81 0.43 162.73 16.69 0.43 161.59 16.42 0.43 160.71 16.22 0.43 159.70 15 ...

Page 8

... Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2000AS Datasheet v3.0 S12ANG S22MAG S22ANG -5.34 0.41 128.50 -6.87 0.41 126.81 -8.40 0.41 125.07 -9.89 0.41 123.35 -11.46 0.41 121.57 -12.98 0.40 119.83 -14.50 0.41 117.91 -16.11 0.41 116.04 -17.66 0.41 114.18 -19.28 0.41 112.34 -21.12 0.41 110.62 -23.29 0.41 108.63 -25.03 ...

Page 9

... Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 P O ART RIENTATION f xxx xxx 9 Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2000AS Datasheet v3.0 PACKAGE MARKING CODE Example: f1ZD P2F f = Filtronic 1ZD = Lot / Date Code P2F = Status, Part Code, Part Type Parts per reel 178mm = 1000 ...

Page 10

... D : ISCLAIMERS This product is not designed for use in any space based or life sustaining/supporting equipment. Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 : O RDERING P ART FPD2000AS FPD2000AS- ATA 10 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2000AS Datasheet v3 NFORMATION N D ...

Related keywords