FPD2250SOT89CE Filtronic, FPD2250SOT89CE Datasheet

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FPD2250SOT89CE

Manufacturer Part Number
FPD2250SOT89CE
Description
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Manufacturer
Filtronic
Datasheet
1.FPD2250SOT89CE.pdf (6 pages)
L
F
•
•
•
•
•
•
G
The FPD2250SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron
utilizes a 0.25 µm x 2250 µm Schottky barrier
gate, defined by high-resolution stepper-based
photolithography. The double recessed gate
structure minimizes parasitics to optimize
performance,
designed for improved linearity over a range of
bias conditions and i/p power levels.
E
Note: T
Output Third-Order Intercept Point
Gate-Source Breakdown Voltage
EATURES
Power at 1dB Gain Compression
LECTRICAL
Saturated Drain-Source Current
Maximum Drain-Source Current
Gate-Drain Breakdown Voltage
ENERAL
OW
Tel: +44 (0) 1325 301111
Gate-Source Leakage Current
(from 15 to 5 dB below P1dB)
29 dBm Output Power (P1dB)
14 dB Small-Signal Gain (SSG)
1.0 dB Noise Figure
44 dBm Output IP3
50% Power-Added Efficiency
FPD2250SOT89E - RoHS compliant
Power-Added Efficiency
Thermal Resistance
Small-Signal Gain
Transconductance
P
Pinch-Off Voltage
AMBIENT
N
ARAMETER
Noise Figure
OISE
Mobility
D
(1850MH
ESCRIPTION
= 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
S
with
PECIFICATIONS
H
Transistor
IGH
an
Z
):
:
L
epitaxial
Fax: +44 (0) 1325 306177
S
INEARITY
|VBDGS|
|VBDGD|
YMBOL
R
P1dB
IMAX
IGSO
IDSS
SSG
PAE
|VP|
GM
IP3
NF
θJC
Specifications subject to change without notice
:
(pHEMT).
Filtronic Compound Semiconductors Ltd
structure
VDS = 5 V; IDS = 50% IDSS;
P
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
VDS = 2 V; IDS = 2.25 mA
VDS = 2 V; VGS ≅ +1 V
It
VDS = 2 V; VGS = 0 V
VDS = 2 V; VGS = 0 V
ACKAGED P
Matched for best IP3
C
IGS = 2.25 mA
IGD = 2.25 mA
POUT = P1dB
ONDITIONS
VGS = -5 V
1
Email: sales@filcs.com
P
T
•
•
•
YPICAL
ACKAGE
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
HEMT
A
:
PPLICATIONS
M
560
0.7
28
12
12
12
FPD2250SOT89
IN
Website:
T
700
600
1.2
1.0
1.1
1.0
29
14
50
43
44
18
16
50
YP
1
:
www.filtronic.com
M
825
1.4
1.3
10
AX
Datasheet v3.0
U
°C/W
dBm
dBm
NITS
mA
mA
mS
dB
dB
µA
%
V
V
V

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FPD2250SOT89CE Summary of contents

Page 1

... VDS = 2 V; VGS = 0 V IMAX VDS = 2 V; VGS ≅ VDS = 2 V; VGS = 0 V IGSO VGS = -5 V |VP| VDS = 2 V; IDS = 2.25 mA IGS = 2.25 mA IGD = 2. θJC 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Datasheet v3.0 HEMT : A : PPLICATIONS ...

Page 2

... P , TOT DC IN OUT : RF Input Power Output Power IN OUT PACK = 2.5W – (0.02 x (65 – 22)) = 1.64W TOT 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Datasheet v3 BSOLUTE AXIMUM 8V -3V IDss 22mA 525mW 175°C -55°C to 150°C 2 ...

Page 3

... I-V curves VG=-0.25V VG=0V presented above). generally measurements, even in stabilized circuits. 5.0 5.5 6.0 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Drain Efficiency and PAE VDS = 5V IDS = 50% IDSS 1.85 GHz PAE Eff ...

Page 4

... S ): YSTEM Swp Max 8GHz 7 GHz S22 Swp Min 0.5GHz 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Swp Max 23dBm 24dBm 26dBm 25dBm 27dBm 28dBm 29dBm Swp Min 900 MHz ...

Page 5

... Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Datasheet v3.0 S12a S22m S22a 46.5 0.459 -159.0 44.3 0.450 -167.9 42.7 0.455 -176.0 41.6 0.445 178.5 40 ...

Page 6

... D ISCLAIMERS This product is not designed for use in any space based or life sustaining/supporting equipment. O RDERING P ART N UMBER FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE : 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 P : RECAUTIONS devices care handling. Electrostatic Discharge ...

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