FPD3000SOT89E Filtronic, FPD3000SOT89E Datasheet

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FPD3000SOT89E

Manufacturer Part Number
FPD3000SOT89E
Description
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Manufacturer
Filtronic
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FPD3000SOT89E
Manufacturer:
RFMD
Quantity:
12 800
Part Number:
FPD3000SOT89ESB
Manufacturer:
RFMD
Quantity:
12 800
Part Number:
FPD3000SOT89ESQ
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RFMD
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12 800
Part Number:
FPD3000SOT89ESR
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RFMD
Quantity:
12 800
L
F
G
The FPD3000SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron
utilizes a 0.25 µm x 3000 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The double recessed
Gate structure minimizes parasitics to optimize
performance,
designed for improved linearity over a range of
bias conditions and i/p power levels.
E
Note: T
Output Third-Order Intercept Point
Gate-Source Breakdown Voltage
EATURES
Power at 1dB Gain Compression
LECTRICAL
Saturated Drain-Source Current
Maximum Drain-Source Current
Gate-Drain Breakdown Voltage
ENERAL
OW
Tel: +44 (0) 1325 301111
Gate-Source Leakage Current
(from 15 to 5 dB below P1dB)
30 dBm Output Power (P1dB)
13 dB Small-Signal Gain (SSG)
1.3 dB Noise Figure
45 dBm Output IP3
45% Power-Added Efficiency
FPD3000SOT89E: RoHS compliant
(Directive 2002/95/EC)
Power-Added Efficiency
Thermal Resistance
Small-Signal Gain
Transconductance
P
Pinch-Off Voltage
AMBIENT
N
ARAMETER
Noise Figure
OISE
Mobility
D
(1850MH
ESCRIPTION
= 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
S
with
PECIFICATIONS
H
Transistor
IGH
an
Z
):
:
L
epitaxial
Fax: +44 (0) 1325 306177
S
INEARITY
|VBDGS|
|VBDGD|
YMBOL
P1dB
IMAX
IGSO
RθJC
IDSS
SSG
PAE
|VP|
GM
IP3
NF
Specifications subject to change without notice
:
(pHEMT).
Filtronic Compound Semiconductors Ltd
structure
VDS = 5 V; IDS = 50% IDSS;
P
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; IDS = 3 mA
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS = 0 V
It
ACKAGED P
Matched for best IP3
C
POUT = P1dB
ONDITIONS
IGS = 3 mA
IGD = 3 mA
VGS = -5 V
1
Email: sales@filcs.com
P
T
YPICAL
ACKAGE
Drivers or output stages
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, a
of wireless infrastructure systems.
HEMT
A
:
PPLICATIONS
M
11.5
750
0.7
29
12
12
FPD3000SOT89
IN
Website:
T
930
800
1.3
0.9
1.5
1.0
30
13
45
42
45
16
16
35
YP
2
:
in PCS/Cellular
www.filtronic.com
nd other types
M
1100
1.3
20
AX
Datasheet v3.0
RoHS
U
°C/W
dBm
dBm
NITS
mA
mA
mS
dB
dB
µA
%
V
V
V

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FPD3000SOT89E Summary of contents

Page 1

... Output Power (P1dB) • Small-Signal Gain (SSG) • 1.3 dB Noise Figure • 45 dBm Output IP3 • 45% Power-Added Efficiency • FPD3000SOT89E: RoHS compliant (Directive 2002/95/EC ENERAL ESCRIPTION The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor utilizes a 0.25 µ ...

Page 2

... P , TOT DC IN OUT : RF Input Power Output Power IN OUT PACK = 3.5W – (0.028 x (65 – 22)) = 2.3W TOT 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD3000SOT89 Datasheet v3 BSOLUTE AXIMUM 8V -3V IDss 30mA 600mW 175°C -40°C to 150°C 3 ...

Page 3

... VG=-1.25V (this effect has been filtered from the I-V curves VG=-1.00V VG=-0.75V presented above). VG=-0.50V VG=-0.25V generally VG=0V measurements, even in stabilized circuits. 4.5 5.0 5.5 6.0 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD3000SOT89 Drain Efficiency and PAE PAE 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 Input Power (dBm ...

Page 4

... Swp Max 8GHz 7 GHz 2. 0 3.0 4.0 5.0 10 -10.0 -5.0 -4.0 -3 S22 Swp Min 0.5GHz 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD3000SOT89 0.4 24dBm 25dBm 0.2 26dBm 27dBm 28dBm 29dBm ...

Page 5

... Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD3000SOT89 Datasheet v3.0 S12a S22m S22a 79.8 0.175 -145.5 56.8 0.384 -150.1 45.6 0.478 -165.4 40.5 0.507 -172.3 38.3 0.522 -179.1 35.9 0.529 176 ...

Page 6

... D APE IMENSIONS AND PART ORIENTATION Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD3000SOT89 Datasheet v3.0 ● Also available with horizontal part orientation ● Hub diameter = 80mm ● Devices per reel = 1000 Website: www ...

Page 7

... D ISCLAIMERS This product is not designed for use in any space based or life sustaining/supporting equipment. O RDERING : FPD3000SOT89 FPD3000SOT89E FPD3000SOT89(E)-BB FPD3000SOT89(E)-BA FPD3000SOT89(E)-BC (ESD) FPD3000SOT89(E)-BD FPD3000SOT89(E)-BE FPD3000SOT89(E)-BG surface mount 7 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs ...

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