STP3467 Stanson Technology Co., Ltd., STP3467 Datasheet - Page 3

• Manufacturer Part Number: STP3467
• Description: P Channel Enhancement Mode Mosfet
• Manufacturer: Stanson Technology Co., Ltd.

ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
Static
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance R
Forward Transconductance
Diode Forward Voltage
Dynamic
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Static
Static
Dynamic
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
Parameter
Parameter
Parameter
Parameter
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
T
T
Symbol
Symbol
Symbol
Symbol
V
d(on)
d(off)
Ciss
Coss
Crss
V
g
t
t
(BR)DSS
I
I
I
DS(on)
r
f
GS(th)
D(on)
V
Q
Q
fs
Q
GSS
DSS
SD
gd
gs
g
V
V
V
V
V
V
R
V
DS
V
V
V
I
V
DS
V
GS
GS
GS
DS
L
S
DS
GS
=6Ω, V
DS
DS
DS
DS
=-1.5A,V
=-6V,V
=-10V,I
=-4.5V,I
=-1.8V,I
=-5.0V,I
=VGS,I
≦-5V,V
=0V,I
=0V,V
=-20V,V
=-6V,V
=-20V,V
V
Condition
Condition
Condition
Condition
V
f=1MHz
R
DD
DS
T
G
J
=-6V,
=6Ω
=-2.8A
=55℃
GEN
GS
D
P Channel Enhancement Mode MOSFET
GS
D
=-250uA
D
GS
GS
=-250uA
GS
=-4.5V,
D
D
D
=-5.2A
=-4.5V
=±12V
GS
GS
=-4.2A
=-1.7A
=-2.8A
=0,
=-10V
=0V
=0V
=0V
-0.35
STP3467
STP3467
STP3467
STP3467
Min
Min
Min
Min
-6
-20
STP3467 2008. V1
0.075 0.090
0.090 0.110
0.120 0.140
485
10
15
18
15
40
-0.8
Typ
Typ
Typ
Typ
85
-10
4.8
1.0
1.0
-5.2A
±100
Max
Max
Max
Max Unit
15
25
25
20
-0.8
-1.2
-5
-1
8
pF
ns
Unit
Unit
Unit
nA
uA
nC
Ω
V
V
A
S
V