MSASC100W45H Microsemi Corporation, MSASC100W45H Datasheet

MSASC100W45H

Manufacturer Part Number

MSASC100W45H

Description

Surface Mount Low Leakage Schottky Diode

Manufacturer

Microsemi Corporation

Datasheet

1.MSASC100W45H.pdf (2 pages)

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Features

Maximum Ratings @ 25 C (unless otherwise specified)

Mechanical

Outline

Datasheet# MSC0291A

DESCRIPTION

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc 145 C

derating, forward current, Tc 145 C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1 s, f= 1kHz

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

Tungsten schottky barrier

Oxide passivated structure for very low leakage currents

Guard ring protection for increased reverse energy capability

Epitaxial structure minimizes forward voltage drop

Hermetically sealed, low profile ceramic surface mount power package

Low package inductance

Very low thermal resistance

Available as standard polarity (strap-to-anode, MSASC100W45H) and

reverse polarity (strap-to-cathode: MSASC100W45HR)

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

MSASC100W45HR

MSASC100W45H

SYMBOL

F(ave)

FSM

RRM

RWM

RRM

/dT

stg

MSASC100W45HR

SCHOTTKY DIODE

MSASC100W45H

SURFACE MOUNT

-65 to +175

LOW LEAKAGE

MAX.

0.35

100

500

3.3

0.5

100 Amps

1N6791

45 Volts

Amps/ C

Amps

UNIT

Volts

Amp

C/W

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MSASC100W45H Summary of contents

Page 1

... Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode, MSASC100W45H) and reverse polarity (strap-to-cathode: MSASC100W45HR) Maximum Ratings @ 25 C (unless otherwise specified) DESCRIPTION ...

Page 2

... MSASC100W45H MSASC100W45HR Electrical Parameters DESCRIPTION SYMBOL Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c 2% Junction Capacitance Breakdown Voltage BVR 120 100 400 450 500 Datasheet# MSC0291A CONDITIONS IR VR= 45 Vdc, Tc VR= 45 Vdc, Tc= 125 C 125 VF1 IF= 10A, Tc ...

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