MC74HC244ADWR2G ON Semiconductor, MC74HC244ADWR2G Datasheet - Page 4

• Manufacturer Part Number: MC74HC244ADWR2G
• Description: IC BUFF/DVR TRI-ST DUAL 20SOIC
• Manufacturer: ON Semiconductor
• Series: 74HCr

Specifications of MC74HC244ADWR2G

• Logic Type: Buffer/Line Driver, Non-Inverting
• Number Of Elements: 2
• Number Of Bits Per Element: 4
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Logic Family: 74HC
• Number Of Channels Per Chip: Octal
• Polarity: Non-Inverting
• Supply Voltage (max): 6 V
• Supply Voltage (min): 2 V
• Maximum Operating Temperature: 125 C
• Mounting Style: SMD/SMT
• High Level Output Current: - 7.8 mA
• Input Bias Current (max): 4 uA
• Low Level Output Current: 7.8 mA
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 55 C
• Number Of Lines (input / Output): 3
• Output Type: 3-State
• Propagation Delay Time: 96 ns @ 2 V or 50 ns @ 3 V or 18 ns @ 4.5 V or 15 ns @ 6 V
• Logical Function: Buffer/Line Driver
• Number Of Elements: 2
• Number Of Channels: 8
• Number Of Inputs: 8
• Number Of Outputs: 8
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Package Type: SOIC W
• Operating Supply Voltage (max): 6V
• Operating Supply Voltage (min): 2V
• Quiescent Current: 4uA
• Technology: CMOS
• Pin Count: 20
• Mounting: Surface Mount
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MC74HC244ADWR2GOS; MC74HC244ADWR2GOS; MC74HC244ADWR2GOSTR

NOTE: Information on typical parametric values and high frequency or heavy load considerations can be found in Chapter 2 of the ON
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
* Used to determine the no−load dynamic power consumption: P
DC ELECTRICAL CHARACTERISTICS
AC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
t
t
t
t
t
t
t
C
C
V
t
PLH
TLH
I
I
PLZ
PZL
PHL
PHZ
PZH
THL
C
I
OZ
CC
OL
out
PD
in
in
,
,
,
,
Semiconductor High−Speed CMOS Data Book (DL129/D).
Semiconductor High−Speed CMOS Data Book (DL129/D).
Power Dissipation Capacitance (Per Buffer)*
Maximum Low−Level Output
Voltage
Maximum Input Leakage Current
Maximum Three−State Leakage
Current
Maximum Quiescent Supply Cur-
rent (per Package)
Maximum Propagation Delay, A to YA or B to YB
Maximum Propagation Delay, Output Enable to YA or YB
Maximum Propagation Delay, Output Enable to YA or YB
Maximum Output Transition Time, Any Output
Maximum Input Capacitance
Maximum Three−State Output Capacitance
(Figures 1 and 3)
(Figures 2 and 4)
(Figures 2 and 4)
(Figures 1 and 3)
(Output in High−Impedance State)
Parameter
Parameter
(Voltages Referenced to GND)
(C
L
V
|I
V
V
Output in High−Impedance State
V
V
V
I
= 50 pF, Input t
out
out
in
in
in
in
out
in
= V
= V
= V
= V
= V
| v 20 mA
= 0 mA
= V
IL
IL
CC
IL
CC
CC
Test Conditions
http://onsemi.com
or V
|I
|I
|I
or GND
or GND
out
out
out
or GND
IH
| v 2.4 mA
| v 6.0 mA
| v 7.8 mA
r
D
= t
= C
4
f
= 6 ns)
PD
V
CC
2
f + I
CC
V
V
V
2.0
4.5
6.0
3.0
4.5
6.0
6.0
6.0
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
CC
V
V
CC
CC
−
−
. For load considerations, see Chapter 2 of the
– 55 to
– 55 to
25_C
25_C
± 0.1
± 0.5
Typical @ 25°C, V
0.26
0.26
0.26
110
110
0.1
0.1
0.1
4.0
96
50
18
15
60
22
19
60
22
19
60
23
12
10
10
15
Guaranteed Limit
Guaranteed Limit
v 85_C
v85_C
± 1.0
± 5.0
0.33
0.33
0.33
115
140
140
0.1
0.1
0.1
40
60
23
20
70
28
24
70
28
24
75
27
15
13
10
15
34
CC
v 125_C
= 5.0 V
v125_C
± 1.0
± 10
160
135
165
165
0.1
0.1
0.1
0.4
0.4
0.4
70
27
23
80
33
28
80
33
28
90
32
18
15
10
15
Unit
Unit
mA
mA
mA
pF
pF
pF
ns
ns
ns
ns
V