1N5614 EIC Semiconductor Incorporated, 1N5614 Datasheet
1N5614
Manufacturer Part Number
1N5614
Description
Glass Passivated Junction Silicon Rectifiers
Manufacturer
EIC Semiconductor Incorporated
Datasheet
1.1N5614.pdf
(1 pages)
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Quantity
Price
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Rating at 25
For capacitive load, derate current by 20%.
Notes :
Page 1 of 1
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
1N5614 - 1N5622
* Glass passivated chip
* High forward surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 50 μA
Maximum Average Forward Current at Ta = 55 °C
Peak Forward Surge Current
(Ta = 100 °C,f = 60 Hz, I
Minimum Forward Voltage at I
Maximum Forward Voltage at I
Maximum Reverse Current
Maximum Reverse Recovery Time ( Note 1 )
Thermal Resistance , Junction to Lead (Note 2)
Operating Junction and Storage Temperature Range
surges @ 1 minute intervals)
(1) Reverse Recovery Test Conditions : I
(2) At 3/8"(10 mm) lead length form body.
°
Method 208 guaranteed
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
0.34 gram
RATING
F(AV)
= 750 mA for ten 8.3 ms
F
F
at V
at V
= 3.0 A
= 3.0A
at Ta = 100 °C
RWM
RWM
F
, Ta = 25 °C
, Ta = 100 °C
= 0.5 A, I
RM
= 1.0 A, I
R(REC)
SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 UNIT
T
V
V
V
V
J
I
BR(MIN)
R
I
F(MAX)
I
, T
F(AV)
F(MIN)
Trr
RWM
FSM
R(H)
I
ӨJL
R
= 0.25 A.
STG
GLASS PASSIVATED JUNCTION
200
220
Dimensions in inches and ( millimeters )
SILICON RECTIFIERS
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
400
440
Certificate TH97/10561QM
-65 to +175
DO - 41
0.75
600
660
1.0
0.8
1.3
0.5
2.0
30
25
38
800
880
1.00 (25.4)
0.205 (5.2)
0.161 (4.1)
1.00 (25.4)
Rev. 02 : July 24, 2006
MIN.
MIN.
Certificate TW00/17276EM
1000
1100
°C/W
μA
μs
°C
V
V
A
A
V
V