DF2S12FS TOSHIBA Semiconductor CORPORATION, DF2S12FS Datasheet
DF2S12FS
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DF2S12FS Summary of contents
Page 1
... Symbol Test Condition Circuit V ― ― ― ― MHz DF2S12FS Unit: mm 0.6±0.05 A 0.2 0.1±0.05 ±0.05 A 0.07 M +0.02 0.48 -0.03 fSC ⎯ JEDEC ⎯ JEITA TOSHIBA 1-1L1A Weight: 0.0006 g (typ.) Min Typ. Max Unit 11.4 12.0 12.6 ― ...
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... Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit 8 ZENER VOLTAGE VZ(V) ESD Immunity Level ± (Top View) 2 DF2S12FS REVERSE VOLTAGE VR(V) 2007-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 DF2S12FS 20070701-EN 2007-11-01 ...