2N6439 Tyco Electronics, 2N6439 Datasheet

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2N6439

Manufacturer Part Number
2N6439
Description
Rf Mosfets N-channel Mosfets
Manufacturer
Tyco Electronics
Datasheet

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SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
1
NOTE:
* Indicates JEDEC Registered Data.
MAXIMUM RATINGS*
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS*
OFF CHARACTERISTICS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ T
Storage Temperature Range
Thermal Resistance, Junction to Case
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Built–In Matching Network for Broadband Operation Using Double
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
Derate above 25 C
(I
(I
(I
(V
C
C
E
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
Match Technique
amplifiers.
CB
= 50 mAdc, I
= 50 mAdc, V
= 5.0 mAdc, I
= 30 Vdc, I
B
E
C
BE
= 0)
= 0)
= 0)
= 0)
Characteristic
C
= 25 C (1)
Characteristic
Rating
(T
C
= 25 C unless otherwise noted.)
V
V
V
Symbol
(BR)CEO
(BR)CES
(BR)EBO
I
CBO
Symbol
Symbol
R
V
V
V
T
Min
P
4.0
CEO
CBO
EBO
33
60
stg
JC
D
BROADBAND RF POWER
Typ
CASE 316–01, STYLE 1
60 W, 225 to 400 MHz
–65 to +200
CONTROLLED “Q”
TRANSISTOR
NPN SILICON
Value
Max
0.83
1.2
146
4.0
33
60
Max
2.0
Order this document
by 2N6439/D
(continued)
Watts
mAdc
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
C/W
Vdc
Vdc
Vdc
C

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2N6439 Summary of contents

Page 1

... P T Symbol unless otherwise noted.) C Symbol Min V (BR)CEO V (BR)CES V 4.0 (BR)EBO I CBO Order this document by 2N6439 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 Value Unit 33 Vdc CEO 60 Vdc CBO 4.0 Vdc EBO 146 ...

Page 2

ELECTRICAL CHARACTERISTICS* — continued Characteristic ON CHARACTERISTICS DC Current Gain (I = 1.0 Adc 5.0 Vdc DYNAMIC CHARACTERISTICS Output Capacitance ( Vdc 1.0 MHz BROADBAND FUNCTIONAL TESTS ...

Page 3

Figure 2. P versus Frequency out Figure 4. Power Gain versus Frequency 3 NARROW BAND DATA Figure 3. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage Figure 6. Output Power versus Supply Voltage ...

Page 4

C1 — C2, C4, C8, C10 — C3, C5, C11 — C6, C7 — — 1.0–10 pF JOHANSON C12 — 100 pF C13, C15 — 680 pF C14, C16 — 1.0 ...

Page 5

Figure 10. Input VSWR versus Frequency 5 Figure 11. Series Equivalent Input-Output Impedance ...

Page 6

Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 ...

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