RN1961FS TOSHIBA Semiconductor CORPORATION, RN1961FS Datasheet - Page 2

• Manufacturer Part Number: RN1961FS
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
Characteristics
RN1961FS~1966FS
RN1961FS~1966FS
RN1961FS~1964FS
RN1965FS, 1966FS
RN1961FS~1966FS
RN1961FS~1964FS
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1965FS
RN1966FS
(Ta = 25°C) (Q1, Q2 common)
V
V
Symbol
V
R1/R2
CE (sat)
I
I
I
I (OFF)
h
I (ON)
C
CBO
CEO
EBO
R1
FE
ob
2
V
V
V
V
V
I
I
V
V
V
f = 1 MHz
C
B
CB
CE
EB
EB
CE
CE
CE
CB
= 5 mA,
= 0.25 mA
Test Condition
= 10 V, I
= 5 V, I
= 20 V, I
= 20 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
⎯
⎯
C
C
C
C
E
B
E
C
= 0
= 10 mA
= 0.1 mA
= 0
= 0
= 0
= 0,
= 5 mA
RN1961FS~RN1966FS
0.0376 0.0468 0.0562
0.088
0.085
0.89
0.41
0.18
0.08
3.76
17.6
37.6
1.76
3.76
0.08
Min
100
120
120
120
0.8
1.0
1.0
1.1
1.2
0.6
0.6
0.8
0.4
30
60
⎯
⎯
⎯
⎯
8
Typ.
1.2
4.7
2.2
4.7
1.0
0.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
22
47
2004-04-12
0.133
0.127
0.121
Max
1.33
0.63
0.29
0.15
5.64
26.4
56.4
2.64
5.64
0.12
100
500
2.0
2.2
2.7
3.6
1.1
1.2
1.5
0.8
1.2
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
mA
kΩ
nA
pF
V
V
V