UMF5N ROHM Co. Ltd., UMF5N Datasheet - Page 3

• Manufacturer Part Number: UMF5N
• Description: Power Management Dual Transistors
• Manufacturer: ROHM Co. Ltd.

Transistors
! ! ! ! Electrical characteristic curves
Tr1
Fig.4 Collector-emitter saturation voltage
1000
1000
100
Fig.1 Grounded emitter propagation
100
10
10
1
1000
1
100
0
1
vs. collector current ( ΙΙ )
10
1
0.1
Fig.7 Collector output capacitance
BASE TO EMITTER VOLTAGE : V
V
Pulsed
I
Pulsed
C
CE
/I
characteristics
0.2
B
=2V
COLLECTOR CURRENT : I
EMITTER TO BASE VOLTAGE : V
=20
Emitter input capacitance
vs. emitter-base voltage
vs. collector-base voltage
0.4
10
Ta=25°C
1
0.6
Ta=−40°C
Ta=125°C
0.8
Cib
100
1.0
10
Cob
C
(mA)
1.2
Ta = 25°C
I
f = 1MHz
E
BE
= 0A
(V)
EB
1000
1.4
( V)
100
1000
10000
100
1000
10
Fig.5 Base-emitter saturation voltage
100
1
10
0.001
1
0.01
1
0.1
10
0.01
1
COLLECTOR CURRENT : I
vs. collector current
Ta=25°C
Single Pulsed
Fig.2 DC current gain vs.
COLLECTOR CURRENT : I
Fig.8 Safe operation area
Ta=25°C
EMITTER CURRENT : V
Ta=125°C
Ta=−40°C
collector current
0.1
10
10
Ta=25°C
DC
Ta=125°C
1
100ms
100
Ta=−40°C
100
10ms
C
C
(mA)
V
Pulsed
(mA)
I
Pulsed
10
CE
1ms
C
CE
/I
(V)
B
=2V
=20
1000
1000
100
Fig.3 Collector-emitter saturation voltage
1000
1000
100
100
10
10
1
1
1
vs. collector current ( Ι )
1
Ta=25°C
Pulsed
V
Ta=25°C
Pulsed
I
Fig.6 Gain bandwidth product
C
CE
/I
B
COLLECTOR CURRENT : I
=10
=2V
I
C
/I
EMITTER CURRENT : I
B
I
C
=20
/I
vs. emitter current
B
=50
10
10
100
100
UMF5N
E
C
(mA)
(mA)
1000
1000
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