BCR08AS-12A Renesas Electronics Corporation., BCR08AS-12A Datasheet - Page 2

• Manufacturer Part Number: BCR08AS-12A
• Description: Triac Low Power Use
• Manufacturer: Renesas Electronics Corporation.

Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
BCR08AS-12A
Electrical Characteristics
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
REJ03G0292-0400 Rev.4.00 Dec 10, 2008
Page 2 of 7
Tj = 125 C
(di/dt)c = – 0.4 A/ms
V
D
= 400 V
3. Soldering with ceramic plate (25 mm
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Parameter
Note2
Note2
Note4
Test conditions
V
V
Symbol
(dv/dt)c
V
V
R
V
I
I
V
I
I
I
RGT
V
FGT
V
RGT
FGT
FGT
RGT
DRM
th (j-a)
FGT
RGT
TM
GD
Min.
0.1
0.5
25 mm
—
—
—
—
—
—
—
—
—
—
—
t0.7 mm).
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Commutating voltage and current waveforms
Max.
2.0
2.0
2.0
2.0
2.0
2.0
10
65
—
—
5
5
5
Supply Voltage
Main Voltage
Main Current
Unit
V/ s
C/W
mA
mA
mA
mA
mA
(inductive load)
V
(dv/dt)c
V
V
V
V
V
Tj = 125 C, V
Tc = 25 C, I
Instantaneous measurement
Tj = 25 C, V
R
Tj = 25 C, V
R
Tj = 125 C, V
Junction to ambient
Tj = 125 C
G
G
= 330
= 330
Test conditions
(di/dt)c
TM
D
D
DRM
D
= 6 V, R
= 6 V, R
Time
Time
Time
V
= 1.2 A,
= 1/2 V
D
applied
Note3
L
L
DRM
= 6 ,
= 6 ,