BCR12KM-12LB Renesas Electronics Corporation., BCR12KM-12LB Datasheet - Page 5

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BCR12KM-12LB

Manufacturer Part Number
BCR12KM-12LB
Description
Triac Medium Power Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
BCR12KM-12LB
Rev.1.00, Aug.20.2004, page 5 of 7
160
140
120
100
160
140
120
100
10
10
10
Rate of Rise of Off-State Voltage (Tj=150°C)
80
60
40
20
80
60
40
20
Rate of Rise of Off-State Voltage (V/µs)
0
0
7
5
4
3
2
7
5
4
3
2
10
3
2
1
–60
–60
1
–40
–40
2 3
Junction Temperature (°C)
Junction Temperature (°C)
I Quadrant
–20
–20
Breakover Voltage vs.
Junction Temperature
Junction Temperature
Breakover Voltage vs.
5 7 10
Holding Current vs.
0
0
20
20
2
2 3 5 7 10
40
40
III Quadrant
60
60
Typical Example
Typical Example
Typical Example
Tj = 150°C
80
80
100
100
3
2 3 5 7 10
120
120
140
140
160
160
4
160
140
120
100
10
10
10
10
10
10
10
Rate of Rise of Off-State Voltage (Tj=125°C)
80
60
40
20
Commutation Characteristics (Tj=125°C)
Rate of Rise of Off-State Voltage (V/µs)
7
5
3
2
7
5
3
2
7
5
3
2
0
7
5
3
2
7
5
3
2
7
–40
3
2
1
0
10
2
1
0
10
Typical Example
Tj = 125°C
I
τ = 500µs
V
f = 3Hz
1
0
T
T
T
D
2
2
= 4A
2 3
Commutating Current (A/ms)
= 200V
+ , G +
– , G – Typical Example
Minimum
Characteristics
Value
Junction Temperature (°C)
Rate of Decay of On-State
2 3
Distribution
0
Junction Temperature
Breakover Voltage vs.
5 7 10
Latching Current vs.
I Quadrant
III Quadrant
5 7 10
2
40
2 3 5 7 10
Main Voltage
Main Current
1
T
Typical Example
80
Typical Example
Tj = 125°C
2
+ , G –
III Quadrant
(dv/dt)c
2 3
I Quadrant
I
T
3
τ
120
2 3 5 7 10
Time
Time
5 7 10
(di/dt)c
V
160
D
2
4

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