L4X-RA5 DOMINANT Semiconductors, L4X-RA5 Datasheet - Page 2

• Manufacturer Part Number: L4X-RA5
• Description: Data Sheet 4mm Oval Lamp High Brightness Alingap 100/50 Dominant Opto Technologies Innovating Illumination Tm
• Manufacturer: DOMINANT Semiconductors

DOMINANT
Opto Technologies
Innovating Illumination
Optical Characteristics at Tj=25˚C
Absolute Maximum Ratings
NOTE
1. Luminous intensity is measured with an accuracy of ± 15%.
2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each pack.
Electrical Characteristics at Tj=25˚C
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
L4R-RA5CS-VW2-1
L4Y-RA5CS-VW2-1
L4x-RA5
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.10)
Reverse voltage ; Ir (max) = 10µA.
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Part Number
Part Ordering
Number
TM
Yellow, 588nm
Red, 625nm
Color
Min. (V)
1.8
Vf @ If = 20mA
Viewing Angle˚
Typ. (V)
2.2
100/50
100/50
2
Max. (V)
2.6
Maximum Value
Luminous Intensity @ 20mA IV (mcd)
-40 … +100
-40 … +100
4mm Oval HB AlInGaP: 100/50
2000
200
120
130
715.0
715.0
50
12
Min.
V
r
@ I
Typ.
950.0
950.0
Min. (V)
12
r
= 10uA
Max.
1800.0
1800.0
Unit
mW
mA
mA
˚C
˚C
˚C
V
V
24/03/2010 V(1)