DMN5L06 Diodes, Inc., DMN5L06 Datasheet

no-image

DMN5L06

Manufacturer Part Number
DMN5L06
Description
Single N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Diodes, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMN5L06DMK-7
Manufacturer:
DIODES
Quantity:
3 000
Part Number:
DMN5L06DMK-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMN5L06DWK-7
Manufacturer:
DIODES
Quantity:
36 000
Part Number:
DMN5L06DWK-7
Manufacturer:
Diodes Inc
Quantity:
34 985
Part Number:
DMN5L06DWK-7
Manufacturer:
DIODES
Quantity:
220
Part Number:
DMN5L06DWK-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMN5L06DWK-7
0
Part Number:
DMN5L06K-7
Manufacturer:
DIODES
Quantity:
36 000
Part Number:
DMN5L06K-7
Manufacturer:
DIODES
Quantity:
310
Part Number:
DMN5L06K-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMN5L06K-7
0
Company:
Part Number:
DMN5L06K-7
Quantity:
5 000
Part Number:
DMN5L06K-7-F
Manufacturer:
DIODES
Quantity:
24 600
Part Number:
DMN5L06KQ-7
0
Part Number:
DMN5L06TK-7
0
Part Number:
DMN5L06VAK-7
Manufacturer:
DIODES
Quantity:
150
Part Number:
DMN5L06VAK-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMN5L06VK-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current (Note 1)
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
Notes:
DMN5L06
Document number: DS30614 Rev. 4 - 2
Single N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
4. Short duration pulse test used to minimize self-heating effect.
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
GS
≤ 1.0MΩ
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
= 25°C unless otherwise specified
TOP VIEW
Continuous
Pulsed
Continuous
Pulsed
@ T
@ T
C
C
= 25°C
= 125°C
www.diodes.com
Symbol
R
SOT-23
BV
V
I
DS (ON)
I
I
D(ON)
C
1 of 4
V
C
C
GS(th)
g
GSS
DSS
FS
SD
oss
rss
DSS
iss
Mechanical Data
Symbol
Symbol
T
V
V
V
j,
R
I
P
DGR
GSS
DM
T
DSS
I
0.49
θ JA
Min
200
D
0.5
0.5
50
d
STG
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
Gate
Typ Max
Equivalent Circuit
1.6
2.2
1.0
500
±20
0.1
1.2
1.4
5.0
50
25
Drain
3
4
Source
Unit
mS
µA
nA
pF
pF
pF
-55 to +150
V
V
Ω
A
V
Value
Value
±20
±40
280
350
357
1.5
50
50
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
= 50V, V
= V
=10V, I
= 25V, V
= 0V, I
= ±20V, V
= 2.7V, I
= 1.8V, I
= 10V, V
= 0V, I
Pin Out Configuration
G
GS
TOP VIEW
, I
D
S
Test Condition
D
D
= 115mA
= 10μA
D
D
GS
DS
GS
= 0.2A
D
= 250μA
DS
= 0.2A,
= 50mA
= 0V
= 7.5V
= 0V
= 0V
DMN5L06
S
© Diodes Incorporated
Units
Units
°C/W
mW
mA
°C
V
V
V
A
October 2007

Related parts for DMN5L06

DMN5L06 Summary of contents

Page 1

... I D(ON) ⎯ g 200 FS ⎯ 0 ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss www.diodes.com DMN5L06 Drain Source TOP VIEW Pin Out Configuration Value Units ±20 V ±40 280 mA 1.5 A Value Units 350 mW 357 °C/W -55 to +150 °C ...

Page 2

... Fig. 4 Static Drain-Source On-Resistance vs. Drain Current www.diodes.com DMN5L06 V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics I DRAIN CURRENT ( GATE SOURCE VOLTAGE (V) GS, Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage October 2007 © Diodes Incorporated ...

Page 3

... T , AMBIENT TEMPERATURE ( C) A Fig. 11 Derating Curve - Total DMN5L06 Document number: DS30614 Rev Pulsed ° 1 Fig.10 Forward Transfer Admittance vs. Drain Current 100 150 ° www.diodes.com DMN5L06 = 0V GS ° 150 C A ° 125 C A ° ° ° ...

Page 4

... Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN5L06 Document number: DS30614 Rev Case SOT-23 K5L = DMN5L06 Product Type Marking Code YM = Date Code Marking K5L Y = Year ex 2005 M = Month ex September 2007 ...

Related keywords