ARF1500 Microsemi Corporation, ARF1500 Datasheet - Page 3
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ARF1500
Manufacturer Part Number
ARF1500
Description
Rf Power Mosfet N-channel Enhancement Mode
Manufacturer
Microsemi Corporation
Datasheet
1.ARF1500.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ARF1500
Manufacturer:
Microsemi
Quantity:
1 400
Part Number:
ARF1500
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Thermal Considerations and Package
Mounting:
able when the package mounting surface is at
25°C and the junction temperature is 200°C. The
thermal resistance between junctions and case
mounting surface is 0.12 °C/W. When installed, an
additional thermal impedance of 0.1°C/W between
the package base and the mounting surface is typi-
cal. Insure that the mounting surface is smooth
and flat. Thermal joint compound must be used to
reduce the effects of small surface irregularities.
The heatsink should incorporate a copper heat
spreader to obtain best results.
heatsink. A clamped joint maintains the required
mounting pressure while allowing for thermal ex-
pansion of both the device and the heat sink. A
simple clamp, and two 6-32 (M3.5) screws can pro-
vide the minimum 125 lb required mounting force.
T = 12 in-lb.
The package is designed to be clamped to a
The rated 1500W power dissipation is only avail-
0.14
0.12
0.10
0.08
0.06
0.04
0.02
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
Figure 4, Typical Threshold Voltage vs Temperature
0
-50 -25
10
F (MHz)
-5
13.5
2.0
27
40
D = 0.9
T
C
0.7
0.5
0.3
0.1
0.05
, CASE TEMPERATURE (°C)
0
Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
0.22 -j 0.67
25
0.45 -j 2.5
0.2 + j .19
Z in (Ω)
Table 1 - Typical Class AB Large Signal Impedance -- ARF1500
6.7-j 12
50
10
-4
75
100 125 150
7.5 -j 0.8
7.1 -j 1.7
6.1 -j 3.0
5.0 -j 3.6
Z
OL
(Ω)
RECTANGULAR PULSE DURATION (SECONDS)
10
SINGLE PULSE
-3
G
Z in - Gate shunted with 25Ω I
Z
Heat Sink
OL
Clamp
- Conjugate of optimum load for 750 Watts
output at V dd = 125V
D
S
10
-2
6
5
4
3
2
1
0
0
V
DS
Figure 5, Typical Output Characteristics
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
.250
.045
.005
Note:
5
The ceramic portion of the device between
leads and mounting surface is beryllium oxide,
BeO. Beryllium oxide dust is toxic when in-
haled. Care must be taken during handling
and mounting to avoid damage to this area .
These devices must never be thrown away
with general industrial or domestic waste.
HAZARDOUS MATERIAL WARNING
Peak T J = P DM x Z θJC + T C
10
Duty Factor D =
-1
DQ
t 1
= 100mA
t 2
10
.207
S
S
S
S
t 1
10.2V
BeO
/
8.2V
6.2V
t 2
4.2V
2.2V
2V
ARF15--
1.065
.375
G
.105 typ.
D
G
D
1525-xx
1.0
15
ARF1500
.207
S
S
S
S
.500
.500
1.065