SI7117DN Vishay, SI7117DN Datasheet

no-image

SI7117DN

Manufacturer Part Number
SI7117DN
Description
P-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7117DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7117DN-T1-E3
Quantity:
9 000
Company:
Part Number:
SI7117DN-T1-E3
Quantity:
70 000
Part Number:
SI7117DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a.
b.
c.
d.
Document Number: 73478
S-51876—Rev. A, 12-Sep-05
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
Surface Mounted on 1” x 1” FR4 Board.
t = 5 sec
See Solder Profile (http://www.vishay.com/doc?73478). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
DS
–150
–150
(V)
1.2 @ V
1.3 @ V
r
DS(on)
8
J
a b
a, b
GS
GS
3.30 mm
D
Ordering Information: Si7117DN-T1—E3
= 150_C)
150_C)
= –10 V
Parameter
= –6 V
(W)
7
D
6
a b
a, b
a b
a, b
D
PowerPAK 1212-8
P-Channel 150-V (D-S) MOSFET
Bottom View
5
D
c
I
D
–2.17
–2.1
(A)
1
S
2
S
3
L p 0 1 H
L p 0.1mH
Q
S
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
3.30 mm
g
7 7 nC
7.7 nC
New Product
4
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 25_C
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
G
_
Symbol
D TrenchFETr Power MOSFETs
D PowerPAKr Package
D Active Clamp circiuts in DC/DC Power
T
J
V
V
E
I
I
P
P
, T
DM
I
I
I
I
AS
Supplies
DS
GS
D
AS
S
D
stg
– Low Thermal Resistance
– Low 1.07–mm Profile
–55 to 150
G
–1.1
–0.9
–2.6
Limit
–2.17
3.2
–10.4
–150
"
–1.7
–2.2
1.01
12.5
2
260
4.5
a, b
8
P-Channel MOSFET
20
a, b
a, b,
a, b
a, b
c
Vishay Siliconix
S
D
Si7117DN
www.vishay.com
Completely
Product Is
Pb-free
Unit
mJ
_C
_C
W
W
V
V
A
A
1

Related parts for SI7117DN

SI7117DN Summary of contents

Page 1

... V = – PowerPAK 1212-8 3. Bottom View Ordering Information: Si7117DN-T1—E3 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) 150_C) J Pulsed Drain Current Continuous Source Drain Diode Current Continuous Source-Drain Diode Current ...

Page 2

... Si7117DN Vishay Siliconix Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1” x 1” FR4 Board. Maximum under steady state conditions is 81 _C/ Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage ...

Page 3

... Test Condition 25_C –1 –0.5 A, di/dt = 100 A/ms di/dt 100 A/ Si7117DN Vishay Siliconix Min Typ Max –12 –12 –0.7 –1 135 = 25_C 25_C www.vishay.com Unit ...

Page 4

... Si7117DN Vishay Siliconix Output Characteristics 1 thru 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.00 2.00 4.00 6.00 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 2 0.5 0.0 0.00 0.20 0.40 0.60 0.80 1.00 I – Drain Current (A) D Gate Charge 0 105 – Total Gate Charge (nC) g www ...

Page 5

... Safe Operating Area at T 10.00 *Limited by r DS(on) 1.00 0.10 0. 25_C A Single Pulse 0.00 0.1 1.0 10.0 V – Drain-to-Source Voltage ( minimum which Si7117DN Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 3.0 2 2.0 1 1.0 0.5 0.0 0.00 2.00 4.00 6.00 V – Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient ...

Page 6

... Si7117DN Vishay Siliconix Max Current V Case Temperature 0.00 25.00 50.00 75.00 100.00 T – Case Temperature (_C) C *The power dissipation P is based 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for D J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...

Page 7

... S-51876—Rev. A, 12-Sep-05 New Product _ –2 – Square Wave Pulse Duration (sec) –3 – Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si7117DN Vishay Siliconix 10 100 1000 – www.vishay.com 7 ...

Page 8

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Related keywords