SI7309DN Vishay, SI7309DN Datasheet - Page 2

• Manufacturer Part Number: SI7309DN
• Description: P-channel 60-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Si7309DN
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Temperature Coefficient
Temperature Coefficient
b
Parameter
a
a
a
a
_
DV
Symbol
DV
V
r
r
GS(th)
I
DS(on)
DS(on)
t
t
t
t
I
C
I
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(on)
V
d(off)
d(off)
I
GSS
DSS
DSS
Q
g
Q
Q
R
DS
I
SM
t
t
t
DS
oss
t
t
t
t
SD
iss
rss
gd
S
rr
a
b
fs
gs
r
f
r
f
rr
g
g
/T
/T
J
J
New Product
I
I
F
F
V
V
I
I
D
D
DS
DS
= –1 3 A di/dt = –100 A/ms T
= –1.3 A, di/dt = –100 A/ms, T
V
V
^ –3.2 A, V
DS
^ –3.2 A, V
DS
= –30 V, V
= –30 V, V
V
V
V
= –60 V, V
V
V
V
= –30 V, V
V
V
V
V
V
DS
DD
DD
V
GS
GS
DS
I
DS
DD
DD
GS
S
DS
Test Condition
DS
= –1.3 A, V
w –5 V, V
= –30 V, R
= 30 V, R
= –10 V, I
= –4.5 V, I
= –15 V, I
= V
= –30 V, R
= 30 V, R
= 0 V, I
= –60 V, V
= 0 V, V
I
I
T
D
D
f = 1 MHz
GS
GEN
GS
GEN
C
GS
= 250 mA
= –250 mA
GS
GS
= 25_C
, I
= –10 V, I
= –4.5 V, I
D
D
= –4.5 V, R
= –10 V, R
= 0 V, T
= 0 V, f = 1 MHz
GS
= –250 mA
GS
= –250 mA
D
D
D
GS
L
L
L
L
GS
= –3.5 A
= –3.9 A
= –3.9 A
= "20
= 9.4 W
= 9.4 W
= 9.4 W
= 9.4 W
= –10 V
= 0 V
= 0 V
J
D
D
= 85_C
= –3.9 A
= –3.9 A
g
g
g
g
J
J
= 1 W
= 25_C
= 25_C
= 1 W
Min
–60
–20
–1
0.092
0.120
Typ
+3.8
14.5
–0.8
–50
600
7.5
2.2
3.7
S–51339—Rev. A, 25-Jul-05
10
70
50
14
25
80
33
35
10
15
30
33
30
32
17
13
Document Number: 73434
"100
Max
0.115
0.146
–1.2
–10
120
–20
–3
–1
22
12
40
50
50
15
25
45
50
–8
50
50
mV/_C
mV/_C
Unit
mA
mA
pF
p
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
V
A
W
W
S
W
A
A
V