MC74VHCT50AMG ON Semiconductor, MC74VHCT50AMG Datasheet - Page 2

• Manufacturer Part Number: MC74VHCT50AMG
• Description: IC BUFF/LVL SHFTR N-INV 14SOEIAJ
• Manufacturer: ON Semiconductor
• Series: 74VHCTr

Specifications of MC74VHCT50AMG

• Logic Type: Buffer/Line Driver, Non-Inverting
• Number Of Elements: 6
• Number Of Bits Per Element: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (5.3mm Width), 14-SOP, 14-SOIJ
• Logic Family: VHCT
• Number Of Channels Per Chip: 5
• Polarity: Non-Inverting
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• High Level Output Current: - 8 mA
• Low Level Output Current: 8 mA
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 55 C
• Number Of Lines (input / Output): 6 / 3
• Propagation Delay Time: 11.4 ns at 3.3 V, 8.5 ns at 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. I
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
MAXIMUM RATINGS
V
V
V
I
I
I
I
I
T
T
T
q
P
V
I
Symbol
IK
OK
O
CC
GND
Latch−Up
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
JA
STG
L
J
CC
IN
OUT
D
ESD
O
absolute maximum rating must be observed.
Y
A
Figure 1. Switching Waveforms
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature under Bias
Thermal Resistance
Power Dissipation in Still Air
ESD Withstand Voltage
Latch−Up Performance
50%
Characteristics
t
50% V
PLH
V
High or Low State
V
V
CC
CC
CC
CC
= 0
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
t
PHL
Parameter
Above V
3.0V
GND
V
V
OH
OL
http://onsemi.com
MC74VHCT50A
Output in HIGH or LOW State (Note 1)
CC
and Below GND at 85_C (Note 5)
Charged Device Model (Note 4)
Human Body Model (Note 2)
2
Machine Model (Note 3)
Symbol
V
t
V
r
V
T
OUT
CC
, t
IN
A
f
TSSOP
TSSOP
*Includes all probe and jig capacitance
SOIC
SOIC
Min
−55
2.0
0.0
0.0
0.0
0
0
DEVICE
UNDER
Figure 2. Test Circuit
TEST
*0.5 v V
*0.5 v V
*0.5 to )7.0
*65 to )150
> 2000
Value
)150
$300
> 200
OUTPUT
2000
*20
$20
$25
$50
$50
260
125
170
500
450
+125
Max
V
100
5.5
5.5
5.5
O
20
I
CC
v )7.0
v )7.0
TEST POINT
C
L
*
ns/V
Unit
°C
V
V
V
_C/W
Unit
mW
mA
mA
mA
mA
mA
mA
_C
_C
_C
V
V
V
V