XP151A11B0MR TOREX SEMICONDUCTOR LTD., XP151A11B0MR Datasheet - Page 2
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XP151A11B0MR
Manufacturer Part Number
XP151A11B0MR
Description
N-channel Power Mosfet
Manufacturer
TOREX SEMICONDUCTOR LTD.
Datasheet
1.XP151A11B0MR.pdf
(5 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
XP151A11B0MR
Manufacturer:
TOREX
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XP151A11B0MR
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2/5
■ELECTRICAL CHARACTERISTICS
DC Characteristics
*1 Effective during pulse test.
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Drain-Source On-State Resistance *1
Forward Transfer Admittance *1
XP151A11B0MR
Gate-Source Cut-Off Voltage
Gate-Source Leak Current
Feedback Capacitance
Drain Cut-Off Current
(Channel-Ambience)
Turn-On Delay Time
Output Capacitance
Turn-Off Delay Time
Thermal Resistance
Input Capacitance
Body Drain Diode
Forward Voltage
PARAMETER
PARAMETER
PARAMETER
PARAMETER
Rise Time
Fall Time
Rth (ch-a)
SYMBOL
SYMBOL
SYMBOL
SYMBOL
Vgs(off)
Rds(on)
td (on)
td (off)
Coss
Crss
| Yfs |
Ciss
Idss
Igss
tr
tf
Vf
Implement on a ceramic PCB
Vgs= ±20V, Vds= 0V
Id= 0.5A, Vgs= 4.5V
Vds= 30V, Vgs= 0V
Id= 1mA, Vds= 10V
Id= 0.5A, Vgs= 10V
Id= 0.5A, Vds= 10V
Vds= 10V, Vgs=0V
Vgs= 5V, Id= 0.5A
If= 1A, Vgs= 0V
CONDITIONS
CONDITIONS
CONDITIONS
CONDITIONS
Vdd= 10V
f=1MHz
MIN.
MIN.
MIN.
MIN.
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.09
0.13
TYP.
TYP.
TYP.
2.4
0.8
150
250
90
30
10
15
25
45
-
-
-
MAX.
±10
0.12
0.17
MAX.
MAX.
MAX.
3.0
1.1
10
-
-
-
-
-
-
-
-
-
T
T
T
a = 25℃
a = 25℃
a = 25℃
UNITS
UNITS
UNITS
UNITS
℃/W
μA
μA
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
V
S
V