XP1B301 Panasonic Corporation of North America, XP1B301 Datasheet
XP1B301
Related parts for XP1B301
XP1B301 Summary of contents
Page 1
... Composite Transistors XP1B301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification Features Two elements incorporated into one package. (Tr1 emitter is connected to Tr2 base.) Reduction of the mounting area and assembly cost by one half. Basic Part Number of Element ...
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... 20V 10V 10V 2mA 160 100mA 10mA 10V –2mA 200MHz 10V 1MHz CB E XP1B301 typ max Unit – 0.1 A –100 A 460 – 0.3 – 0 MHz 2.7 pF typ max Unit 0.1 A 100 A 460 0.1 ...
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... Collector current I C XP1B301 I — – 400 V = – Ta=25˚C – 350 – 300 – 250 – 200 – 150 –100 – 50 ...
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... Emitter current — 1200 V =10V CE Ta=25˚C 1000 800 600 400 200 0 0 0.2 0.4 0.6 0.8 1 Base to emitter voltage V BE XP1B301 NF — =–5V CB f=1kHz R = Ta=25˚ 0.01 0.03 0.1 0 Emitter current Parameter — 300 I ...
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... CE G =80dB V Function=FLAT 200 Ta=25˚C 160 R =100k g 120 80 22k 4. 100 200 300 500 1000 ( A ) Collector current I C XP1B301 h — 600 V =10V CE 500 Ta=75˚C 400 25˚C 300 –25˚C 200 100 0 0.1 0 100 ( mA ) Collector current ...