HY27LF081G2M Hynix Semiconductor, HY27LF081G2M Datasheet - Page 23

• Manufacturer Part Number: HY27LF081G2M
• Description: 1gbit 128mx8bit / 64mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.7 / Apr. 2005
(Without Spare Area)
(Without Spare Area)
Serial Access Time
(Byte / 512Byte)
Spare Area Size
HY27UF081G2M
HY27UF161G2M
HY27SF081G2M
HY27SF161G2M
Part Number
Organization
Block Size
Page Size
Not Used
Table 16: 4th Byte of Device Identifier Descript ion
1K
2K
Reserved
Reserved
8
16
Standard (50ns)
Fast
64K
128K
256K
Reserved
X8
X16
Description
Volt age
3.3V
3.3V
1.8V
1.8V
(30ns)
Bus Width
x16
Table 17: Read ID
x16
x8
x8
Reserved
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
IO7
Manufacture
IO6
0
1
Code
ADh
ADh
ADh
ADh
IO5-4
0 0
0 1
1 0
1 1
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
Device
Code
ADh
C1h
A1h
F1h
IO3
0
1
3rd Code
Don’t care
Don’t care
Don’t care
Don’t care
IO2
0
1
Preliminary
4th Code
IO1-0
0 0
0 1
1 0
1 1
15h
55h
15h
55h
23