HY27SA161G1M Hynix Semiconductor, HY27SA161G1M Datasheet - Page 34
HY27SA161G1M
Manufacturer Part Number
HY27SA161G1M
Description
1gbit 128mx8bit / 64mx16bit Nand Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27SA161G1M.pdf
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Note: 1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are don't care.
Rev 0.5 / Oct. 2004
ALE
RE
WE
RB
CLE
CE
I/O
2. Only address cycle 4 is required.
Command
Code
50h
Add. M
cycle 1
Figure 28. Read C Operation, One Page AC Waveform
Add. M
cycle 2
Address M Input
Add. M
cycle 3
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
tWHALL
Add. M
cycle 4
Busy
HY27UA(08/16)1G1M Series
tBHRL
HY27SA(08/16)1G1M Series
tWHBH
Last Byte or Word in Area C
Data Output from M to
Data M
tALLRL2
Data
Last
34
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