SUP90P06-09L Vishay, SUP90P06-09L Datasheet

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SUP90P06-09L

Manufacturer Part Number
SUP90P06-09L
Description
P-channel 60-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SUP90P06-09L
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SUP90P06-09L-E3
Manufacturer:
IXYS
Quantity:
5 000
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Part Number:
SUP90P06-09L-E3
Quantity:
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SUP90P06-09L-E3
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3 050
Notes:
a.
b.
c.
Document Number: 73010
S-41203—Rev. A, 21-Jun-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient Free Air
Junction-to-Case
Ordering Information: SUP90P06-09L—E3
J
V
Duty cycle v 1%.
See SOA curve for voltage derating.
Limited by package.
= 175_C)
DS
−60
−60
(V)
TO-220AB
Top View
G D S
c
c
0.0118 @ V
0.0093 @ V
a
r
DS(on)
DRAIN connected to TAB
P-Channel 60-V (D-S) 175_C MOSFET
Parameter
Parameter
GS
GS
= −4.5 V
(W)
= −10 V
C
T
L = 0 1 mH
L = 0.1 mH
T
T
= 25_C UNLESS OTHERWISE NOTED)
T
C
C
C
A
= 125_C
= 25_C
= 25_C
= 25_C
I
New Product
D
−90
−90
(A)
c
G
P-Channel MOSFET
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D DC/DC Primary Switch
D Automotive
T
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AS
GS
DS
AS
D
D
D
D
− 12-V Boardnet
− High-Side Switches
− Motor Drives
stg
S
D
−55 to 175
SUP90P06-09L
Vishay Siliconix
Limit
Limit
−200
"20
250
−60
−90
−67
−65
211
2.4
0.6
62
b
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
A
A
1

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SUP90P06-09L Summary of contents

Page 1

... DS DS(on) 0.0093 @ V = − −60 −60 0.0118 @ V = −4 TO-220AB DRAIN connected to TAB Top View Ordering Information: SUP90P06-09L—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage c c Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current a ...

Page 2

... SUP90P06-09L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-41203—Rev. A, 21-Jun-04 New Product 0.020 25_C 0.016 125_C 0.012 0.008 0.004 0.000 SUP90P06-09L Vishay Siliconix Transfer Characteristics 200 160 120 125_C C 40 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current V = 4.5 V ...

Page 4

... SUP90P06-09L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.7 1.4 1.1 0.8 0.5 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product ...

Page 5

... New Product 1000 100 10 1 0.1 125 150 175 0.1 Normalized Thermal Transient Impedance, Junction-to-Case −3 − Square Wave Pulse Duration (sec) SUP90P06-09L Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse − Drain-to-Source Voltage (V) DS Notes ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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