SUP40N10-30 Vishay, SUP40N10-30 Datasheet

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SUP40N10-30

Manufacturer Part Number
SUP40N10-30
Description
N-channel 100-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72135
S-71662-Rev. C, 06-Aug-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
100
Ordering Information: SUP40N10-30
(V)
T O-220AB
0.030 at V
0.034 at V
T op V i e w
G D S
r
N-Channel 100-V (D-S) 175 °C MOSFET
DS(on)
J
a
= 175 °C)
a
SUP40N10-30-E3 (Lead (Pb)-free)
GS
GS
(Ω)
= 10 V
= 6 V
C
I
D
37.5
= 25 °C, unless otherwise noted
40
(A)
T
T
PCB Mount
T
L = 0.1 mH
T
C
A
C
C
Free Air
= 125 °C
= 25 °C
= 25 °C
= 25 °C
c
c
FEATURES
• TrenchFET
• 175 °C Junction Temperature
G
N-Channel MOSFET
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
DM
D
S
I
AS
thJC
GS
thJA
DS
AS
D
D
®
stg
Power MOSFET
- 55 to 175
Limit
Limit
± 20
107
3.75
100
62.5
1.4
40
23
75
35
61
40
SUP40N10-30
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
mJ
COMPLIANT
°C
W
V
A
Available
1

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SUP40N10-30 Summary of contents

Page 1

... DS(on) 0.030 100 0.034 O-220AB Ordering Information: SUP40N10-30 SUP40N10-30-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy ...

Page 2

... SUP40N10-30 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 72135 S-71662-Rev. C, 06-Aug- °C 125 ° 100 SUP40N10-30 Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.08 0.06 0.04 ...

Page 4

... SUP40N10-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.5 1.0 0.5 0 Junction T emperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (Sec) in Avalanche Current vs. Time www.vishay.com ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72135. Document Number: 72135 S-71662-Rev. C, 06-Aug-07 125 150 175 - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUP40N10-30 Vishay Siliconix 1000 Limited on) 100 °C C Single Pulse 0.1 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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