SUP60N06-12P Vishay, SUP60N06-12P Datasheet
SUP60N06-12P
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SUP60N06-12P Summary of contents
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... R (Ω) DS DS(on) 60 0.012 O-220AB Top View Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free) SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy ...
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... SUP60N06-12P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 1.5 2.0 0 0.05 0.04 0.03 0.02 0.01 0. On-resistance vs. Gate-to-Source Voltage SUP60N06-12P Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics T = 125 ° ° Gate-to-Source Voltage (V) ...
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... SUP60N06-12P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature Temperature (°C) J Drain-Source Breakdown vs. Junction Temperature www.vishay.com 4 New Product 100 10 1 0.1 0.01 0.001 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69070. Document Number: 69070 S-83098-Rev. A, 29-Dec-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUP60N06-12P Vishay Siliconix - www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...