SEP8506 Honeywell International's Solid State Electronics Center (SSEC), SEP8506 Datasheet
SEP8506
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SEP8506 Summary of contents
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... Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package INFRA-20 ...
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... SEP8506 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Storage Temperature Range Operating Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡ ...
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... SEP8506 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1. Forward current - mA Fig. 5 Spectral Bandwidth 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 890 910 930 950 970 990 1010 Wavelength - Fig. 2 Radiant Intensity vs Forward Current gra_030 ...
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... SEP8506 GaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature 0.2 0.1 -50 -25 0 +25 +50 + Free-air temperature - (°C) A All Performance Curves Show Typical Values h Honeywell reserves the right to make changes in order to improve design and supply the best products possible ...