MT18RTF25672FDY Micron Semiconductor Products, MT18RTF25672FDY Datasheet - Page 6

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MT18RTF25672FDY

Manufacturer Part Number
MT18RTF25672FDY
Description
1.55v Ddr2 Sdram Fbdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Electrical Specifications
Table 6: Absolute Maximum Ratings
Table 7: Input DC Voltage and Operating Conditions
Serial Presence-Detect Data
PDF: 09005aef82b63cf2
rtf18c256x72fdy.pdf - Rev. C 12/09 EN
Parameter
Voltage on any signal pin relative to V
Voltage on V
Voltage on V
Voltage on V
DDR2 SDRAM device operating case temperature
AMB device operating case temperature
Parameter
AMB supply voltage
DDR2 SDRAM supply voltage
Termination voltage
EEPROM supply voltage
SPD input high (logic 1) voltage
SPD input low (logic 0) voltage
RESET input high (logic 1) voltage
RESET input low (logic 0) voltage
Leakage current (RESET)
Leakage current (link)
CC
DD
TT
pin relative to V
pin relative to V
pin relative to V
Notes:
Notes:
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
For the latest serial presence-detect data, refer to Micron’s SPD page:
SPD.
1. V
2. T
3. See applicable DDR2 SDRAM component data sheet for
1. Applies to AMB and SPD.
2. Applies to SMBus and SPD bus signals.
3. Applies to AMB CMOS signal RESET#.
4. For all other AMB related DC parameters, refer to the high-speed differential link inter-
SS
SS
SS
t
ter settings. The
ry to sustain <85°C operation.
face specification.
REFI = 3.9µs above 85°C); DDR2 SDRAM component data sheet.
C
IN
is specified at 95°C only when using 2X refresh timing (
should not be greater than V
SS
t
REFI parameter is used to specify the doubled refresh interval necessa-
Symbol
V
V
V
V
V
V
DDSPD
V
IH(DC)
IH(DC)
V
IL(DC)
IL(DC)
I
I
DD
CC
TT
2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
L
L
V
Symbol
6
IN
V
V
V
, V
T
DD
CC
TT
C
OUT
0.48 × V
CC
1.455
Min
–0.6
.
–90
1.5
3.0
2.1
1.0
–5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
Min
–0.3
–0.3
–0.5
–0.5
0
0
0.50 × V
Nom
1.50
1.55
DD
Electrical Specifications
Max
1.75
1.75
110
2.3
2.3
95
t
REFI and extended mode regis-
0.52 × V
t
REFI = 7.8µs at or below 85°C;
V
1.575
Max
DDSPD
© 2007 Micron Technology, Inc. All rights reserved.
1.9
3.6
0.8
0.5
90
5
DD
Units
°C
°C
www.micron.com/
V
V
V
V
Units
µA
µA
V
V
V
V
V
V
V
V
Notes
2, 3
Notes
1
1
2
2
3
2
3
4

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