MT16HTF12864HZ Micron Semiconductor Products, MT16HTF12864HZ Datasheet

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MT16HTF12864HZ

Manufacturer Part Number
MT16HTF12864HZ
Description
Ddr2 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM SODIMM
MT16HTF12864HZ – 1GB
MT16HTF25664HZ – 2GB
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 1GB (128 Meg x 64) or 2GB (256 Meg x 64)
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Halogen-free
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Table 1: Key Timing Parameters
PDF: 09005aef8339ef97
htf16c128_256x64hz.pdf - Rev. B 3/10 EN
(SODIMM)
PC2-5300, or PC2-6400
tion
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DDQ
= 1.7–3.6V
1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 6
800
800
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 200-Pin SODIMM (MO-224 R/C E)
Module height: 30mm (1.18in)
CL = 4
Options
• Operating temperature
• Package
• Frequency/CL
533
533
553
553
400
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (halogen-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
CL = 3
400
400
400
400
400
module offerings.
2
t
(ns)
12.5
RCD
15
15
15
15
A
A
≤ +85°C)
≤ +70°C)
© 2008 Micron Technology, Inc. All rights reserved.
3
1
(ns)
12.5
t
15
15
15
15
RP
Features
Marking
None
-80E
-53E
-40E
-800
-667
(ns)
t
55
55
55
55
55
Z
RC
I

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MT16HTF12864HZ Summary of contents

Page 1

... DDR2 SDRAM SODIMM MT16HTF12864HZ – 1GB MT16HTF25664HZ – 2GB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB (128 Meg x 64) or 2GB (256 Meg x 64) • 1.8V DD DDQ • 1.7–3.6V DDSPD • ...

Page 2

Table 2: Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 1GB Modules 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module 2 Part Number Density ...

Page 3

Pin Assignments Table 5: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 9 V ...

Page 4

Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: ...

Page 5

Table 6: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef8339ef97 ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DQ8 DQ DQ9 DQ DQ10 DQ DQ11 DQ ...

Page 7

General Description DDR2 SDRAM modules are high-speed, CMOS dynamic random access memory mod- ules that use internally configured 4 or 8-bank DDR2 SDRAM devices. DDR2 SDRAM modules use DDR architecture to achieve high-speed operation. DDR2 architecture is essentially a 4n-prefetch ...

Page 8

Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data ...

Page 9

DRAM Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 8: Module and Component Speed Grades DDR2 ...

Page 10

I Specifications DD Table 9: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating one bank ...

Page 11

Table 9: DDR2 I Specifications and Conditions – 1GB (Continued) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...

Page 12

Table 10: DDR2 I Specifications and Conditions – 2GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one bank active-precharge current: ...

Page 13

Table 10: DDR2 I Specifications and Conditions – 2GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating bank interleave read ...

Page 14

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 11: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 15

Module Dimensions Figure 3: 200-Pin DDR2 SODIMM 2.0 (0.079 (2X) 1.80 (0.071) (2X) U6 6.0 (0.236) TYP Pin 1 2.0 (0.079) TYP 16.25 (0.64) TYP U10 U15 3.5 (0.138) TYP Pin 200 1. All dimensions are in millimeters ...

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