MT16JSS51264HZ Micron Semiconductor Products, MT16JSS51264HZ Datasheet - Page 11

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MT16JSS51264HZ

Manufacturer Part Number
MT16JSS51264HZ
Description
Ddr3 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
I
Table 9: DDR3 I
Values are for the MT41J512M8THU DDR3 SDRAM only and are computed from values specified in the 4Gb TwinDie (512
Meg x 8) component data sheet
PDF: 09005aef8384b3e9
jss16c512x64hz.pdf – Rev. B 8/09 EN
Parameter
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled): MAX T
95°C
All banks interleaved read current
Reset current
DD
Specifications
DD
Specifications and Conditions – 4GB
C
= 85°C
C
4GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
=
11
Combined
Symbol
I
I
I
I
I
I
I
I
CDD2NT
I
I
I
CDD6ET
CDD2PS
CDD2PF
CDD4W
I
I
CDD2Q
I
I
I
CDD2N
CDD3N
CDD4R
CDD5B
CDD3P
CDD0
CDD1
CDD6
CDD7
CDD8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1333
1176
1376
2176
2776
2576
3816
192
416
696
776
936
616
896
144
192
224
Electrical Specifications
©2008 Micron Technology, Inc. All rights reserved.
1066
1096
1216
1936
2496
2456
3576
192
376
616
696
856
536
776
144
192
224
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA

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