MT8HTF12864HZ Micron Semiconductor Products, MT8HTF12864HZ Datasheet - Page 8

• Manufacturer Part Number: MT8HTF12864HZ
• Description: 1gb, 2gb X64, Sr 200-pin Ddr2 Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 7: Absolute Maximum Ratings
PDF: 09005aef83c2a451
htf8c128_256x64hz.pdf - Rev. C 3/10 EN
V
Symbol
IN
V
V
I
V
VREF
T
, V
I
DDQ
T
DDL
OZ
I
DD
C
A
I
1
OUT
Parameter
V
V
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
pins not under test = 0V)
Output leakage current; 0V ≤ V
DQ and ODT are disabled
V
DDR2 SDRAM component operating tem-
perature
Module ambient operating temperature
DD
DDQ
DDL
DD
REF
; V
supply voltage relative to V
leakage current; V
supply voltage relative to V
supply voltage relative to V
REF
Notes:
2
input 0V ≤ V
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet are not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
IN
REF
≤ 0.95V; (All other
= valid V
OUT
SS
SS
SS
SS
1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM
REF
≤ V
level
DDQ
IN
≤
;
Command/Address, RAS#,
CAS#, WE#, S#, CKE, ODT
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C.
Electrical Specifications
Min
–1.0
–0.5
–0.5
–0.5
–40
–20
–16
–40
–40
–5
–5
0
0
© 2009 Micron Technology, Inc. All rights reserved.
Max
2.3
2.3
2.3
2.3
40
20
16
85
95
70
85
5
5
Units
µA
µA
µA
°C
°C
°C
°C
V
V