GSIB620 Vishay, GSIB620 Datasheet
GSIB620
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GSIB620 Summary of contents
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... V 140 RMS V 200 100 ° F(AV ° FSM STG GSIB620 thru GSIB680 Vishay General Semiconductor RMS GSIB640 GSIB660 GSIB680 400 600 800 280 420 560 400 600 800 (1) 6.0 (2) 2.8 180 120 - 150 www.vishay.com UNIT ...
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... GSIB620 thru GSIB680 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous forward at 3.0 A voltage drop per diode Maximum DC reverse current rated DC blocking voltage per diode T A THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance Note: (1) Unit case mounted on Al plate heatsink (2) Units mounted on P.C.B. with 0.5 x 0.5" ...
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... Figure 5. Typical Junction Capacitance Per Diode 100 10 1 0.1 80 100 0.01 Figure 6. Typical Transient Thermal Impedance Case Style GSIB-5S 30 ± 0.3 + 7.5 7.5 ± 0.2 10 ± 0.2 ± 0.2 GSIB620 thru GSIB680 Vishay General Semiconductor 1 10 Reverse Voltage (V) 0 Heating Time (s) 4.6 ± 0.2 3.6 ± 0.2 0.7 ± 0.1 2.7 ± 0.2 www.vishay.com 100 100 3 ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...