US6J2 ROHM Co. Ltd., US6J2 Datasheet

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US6J2

Manufacturer Part Number
US6J2
Description
2.5v Drive Pch+pch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
US6J2TR
Manufacturer:
ROHM
Quantity:
8 000
Company:
Part Number:
US6J2TR
Quantity:
9 000
Transistors
2.5V Drive Pch+Pch MOSFET
US6J2
Silicon P-channel MOSFET
1) Two Pch MOSFET transistors in a single
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (2.5V) makes this device
5) Drive circuits can be simple.
Switching
∗1 Pw≤10µs, Duty cycle≤50%
∗2 Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Source current
(Body diode)
∗ Mounted on a ceramic board
<It is the same ratings for Tr1 and Tr2>
Type
US6J2
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
TUMT6 package.
ideal for portable equipment.
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TR
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
−0.4
125
179
−20
±12
150
1.0
0.7
±1
±4
−4
Inner circuit
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Dimensions (Unit : mm)
∗2
TUMT6
°C/W / ELEMENT
(6)
(1)
W / ELEMENT
°C/W / TOTAL
W / TOTAL
∗1
Unit
Unit
°C
°C
V
V
A
A
A
A
(2)
Abbreviated symbol : J02
(5)
∗1
(4)
(3)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗2
Rev.B
US6J2
1/4

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US6J2 Summary of contents

Page 1

... W / TOTAL ∗ 0 ELEMENT Tch 150 −55 to +150 Tstg Symbol Limits °C/W / TOTAL ∗ 125 Rth(ch-a) °C/W / ELEMENT 179 US6J2 Abbreviated symbol : J02 (5) (4) ∗1 ∗2 ∗1 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (2) (3) (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain Unit V V ...

Page 2

... V DD ∗ − − = −4.5V 0 ∗ − − = −1A 0 Min. Typ. Max. Unit − − −1.2 = −0.4A US6J2 Conditions =0V DS = −1mA D = −4. − −2. −0.5A D −15 V −15V R =15Ω =10Ω G Conditions =0V GS Rev.B 2/4 ...

Page 3

... Resistance vs. Gate-Source Voltage 10000 = − Pulsed Ta=125°C Ta=75°C 1000 Ta=25°C Ta= −25°C 100 0.01 0 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) US6J2 8 Ta=25°C = −15V − =10Ω Pulsed ...

Page 4

... D.U. Fig.10 Switching Time Measurement Circuit G(Const.) D.U. Fig.12 Gate Charge Measurement Circuit US6J2 Pulse Width V GS 10% 50% 50% 90% 10% 10% 90% 90 d(on) r d(off off Fig.11 Switching Waveforms ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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