KSP8098 Fairchild Semiconductor, KSP8098 Datasheet

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KSP8098

Manufacturer Part Number
KSP8098
Description
Ksp8098/8099 Npn Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width 300 s, Duty Cycle 2%
V
V
V
I
P
T
T
BV
BV
BV
I
I
I
h
V
V
f
C
C
CBO
CEO
EBO
T
FE
CBO
CEO
EBO
C
J
STG
Symbol
CE
BE
ob
CBO
CEO
EBO
Symbol
(on)
(sat)
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CEO
Parameter
C
= KSP8098: 60V
(max)=625mW
KSP8099: 80V
: KSP8098
: KSP8099
: KSP8098
: KSP8099
: KSP8098
: KSP8099
: KSP8098
: KSP8099
T
a
=25 C unless otherwise noted
T
KSP8098/8099
: KSP8098
: KSP8099
: KSP8098
: KSP8099
Parameter
a
=25 C unless otherwise noted
I
I
I
V
V
V
V
V
V
V
I
I
V
V
f=100MHz
V
f=1MHz
V
C
C
E
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CB
=100 A, I
=10mA, I
=10 A, I
=100mA, I
=100mA, I
=6V, I
=60V, I
=80V, I
=60V, I
=5V, I
=5V, I
=5V, I
=5V, I
=5V, I
=5V, I
=5V, I
Test Condition
C
C
C
C
C
C
C
E
C
B
E
E
B
=0
=1mA
=10mA
=100mA
=1mA
=10mA
=10mA
=0
E
=0
=0
=0
=0
=0
B
B
=0
=5mA
=10mA
1. Emitter 2. Base 3. Collector
1
-55 ~ 150
Value
500
625
150
60
80
60
80
6
Min.
100
100
150
0.5
0.6
60
80
60
80
75
6
TO-92
Max.
100
100
100
100
300
0.4
0.3
0.7
0.8
6
Units
mW
mA
Rev. A1, July 2001
V
V
V
V
V
C
C
Units
MHz
nA
nA
nA
nA
pF
V
V
V
V
V
V
V
V
V

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KSP8098 Summary of contents

Page 1

... Amplifier Transistor • Collector-Emitter Voltage KSP8098: 60V CEO • Collector Power Dissipation: P (max)=625mW C • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Symbol V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO ...

Page 2

... 100 10 0 [mA], COLLECTOR CURRENT C Figure 1. DC current Gain [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Output Capacitance ©2001 Fairchild Semiconductor Corporation 10 1 0.1 0. 100 Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 1000 1MHz 100 10 10 100 1 Figure 4. Current Gain Bandwidth Product ...

Page 3

... Package Demensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2001 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, July 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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