FJP9100 Fairchild Semiconductor, FJP9100 Datasheet - Page 2

• Manufacturer Part Number: FJP9100
• Description: Fjp9100 Npn Silicon Darlington Transistor
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Collector-Emitter Saturation Voltage
Figure 5. R
100
10k
100
0.1
1k
10
5
4
3
2
1
0
1
0.1
-50
0
I
Ta = - 25
C
Figure 1. Static Characterstic
= 400 I
V
-25
CE
1
[V], COLLECTOR-EMITTER VOLTAGE
B
T
A
B
o
I
& R
C
C
[
0
o
[A], COLLECTOR CURRENT
C], ABBIENT TEMPERATURE
2
1
vs. Ambient Temperature
25
3
50
1
4
75
Ta = 75
Ta = 125
5
I
100
B
o
C
= 1.4mA
I
I
I
B
B
B
Ta = 25
= 0.6mA
= 0.4mA
= 0
6
o
C
125
R
R
1
B
o
C
150
7
10
Figure 4. Base-Emitter Saturation Voltage
1000
10k
100
100
0.1
100
1k
10
10
10
1
0.1
0.1
1
Ta = 75
Ta = - 25
Ta = 125
V
I
f = 1MHz, I
C
Figure 6. Output Capacitance
CE
Ta = - 25
= 400 I
= 5V
Figure 2. DC current Gain
V
o
C
CB
o
o
C
C
B
I
I
[V], COLLECTOR-BASE VOLTAGE
C
C
Ta = 25
E
o
Ta = 125
Ta = 75
C
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
= 0
Ta = 25
o
C
o
o
C
o
C
C
10
1
1
Rev. A, May 2003
100
10
10