DTB114TK ROHM Co. Ltd., DTB114TK Datasheet - Page 2

• Manufacturer Part Number: DTB114TK
• Description: Digital Transistor Built-in Resistor
• Manufacturer: ROHM Co. Ltd.

Transistors
Fig.1 DC current gain vs. Collector current
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff curren
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
External characteristics (Ta=25°C)
Electrical characteristics curves
Characteristics of built-in transistor
500
200
100
50
20
10
1k
500µ
5
2
1
V
CE
1m
=5V
COLLECTOR CURRENT : I
2m
Parameter
5m 10m 20m
Ta=25°C
Ta= −40°C
50m 100m 200m 500m
C
(A)
Ta=100°C
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
EBO
T
1
∗
Fig.2 Collector-emitter saturation voltage
500m
200m
100m
50m
20m
10m
5m
2m
1m
500µ
Min.
1
−50
−40
100
−5
−
−
−
7
−
vs. Collector current
1m
Ta=25°C
COLLECTOR CURRENT : I
2m
Typ.
Ta= −40°C
250
200
10
5m 10m 20m
−
−
−
−
−
−
Ta=100°C
Max.
−0.5
−0.5
−0.3
600
13
−
−
−
−
50m 100m 200m 500m
C
I
C
(A)
/I
B
MHz
=20/1
Unit
µA
µA
kΩ
V
V
V
V
−
I
I
I
V
V
I
I
V
C
C
E
C
C
CB
EB
CE
= −50µA
= −50µA
= −1mA
/I
= −50mA , V
B
= −4V
= −50V
= −10V , I
= −50mA/−2.5mA
Conditions
E
CE
=50mA , f=100MHz
Rev.B
= −5V
DTB114TK
−
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