SDA01-V1 Allegro MicroSystems, Inc., SDA01-V1 Datasheet

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SDA01-V1

Manufacturer Part Number

SDA01-V1

Description

Pnp Darlington General Purpose

Manufacturer

Allegro MicroSystems, Inc.

Datasheet

1.SDA01-V1.pdf (1 pages)

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SDA01

Absolute maximum ratings

Equivalent circuit diagram

Symbol

1

R

V

V

V

V

T

I

P

1

CBO

CEO

CE

EBO

I

CP

I

T

stg

j–a

: 4k typ R

Characteristic curves

C

B

R

T

j

1

(sat)-I

15,16

R

–2.5

–2.0

–1.5

–1.0

–0.5

2

50

10

–3

–2

–1

2

5

1

0

–0.2

I

C

0

1

0

C

Temperature Characteristics (Typical)

-V

I

B

=–5mA

3

CE

2

: 100 typ

–2mA

–1

j-a

–2.5 (PW 1ms, D

Characteristics (Typical)

5

-PW Characteristics

10

13,14

–2

–0.5

PW (mS)

4

V

3 (T

–40 to +150

I

CE

C

–3

Ratings

50

(A)

(V)

–1.5

–0.1

a

–60

–60

150

41.6

–6

5

=25 C)

100

–1

–4

(I

75 C

Ta=125 C

C

/ I

B

–5

u

=1000)

11,12

500 1000

10%)

6

PNP Darlington

General purpose

–2.5

–6

7

(T

Unit

9,10

C/W

a

W

V

V

V

A

A

A

8

C

C

=25 C)

10000

5000

1000

500

100

V

50

–3

–2

–1

–0.03 –0.05

–0.1

CE

0

3

2

1

0

h

0

FE

4

3

2

1

(sat)-I

Electrical characteristics

-I

C

P

Symbol

V

V

Characteristics (Typical)

T

–0.5

B

-T

CE

V

BE

–0.1

I

I

h

CBO

EBO

Characteristics (Typical)

a

CEO

(sat)

FE

(sat)

50

Characteristics

–1

I

Ta ( C)

B

I

C

(mA)

(A)

I

C

=–0.5A

I

C

1-1 Chip Operation

2-2 Chip Operation

3-3 Chip Operation

4-4 Chip Operation

=–1A

–0.5

–5

100

2000

min

–60

–10

(V

–1

I

CE

C

=–2A

=–4V)

typ

Specification

150

–2.5

–50

typ

12000

max

–1.4

–2.2

–10

–3

h

I

C

FE

-V

-I

10000

–0.05

External dimensions

5000

1000

BE

–0.5

–0.1

C

–2.5

–2.0

–1.5

–1.0

–0.5

500

100

–5

–1

50

Temperature Characteristics (Typical)

–0.03

0

–3

Temperature Characteristics (Typical)

0

Single Pulse

Without Heatsink

T

a

Unit

Safe Operating Area (SOA)

=25 C

–0.05

mA

–5

V

V

V

A

–0.1

–10

–1

V

V

I

CE

BE

C

V

I

(A)

C

(V)

(V)

CE

=–1A, I

Conditions

–0.5

V

I

=–4V, I

V

C

–2

CB

=–10mA

EB

(V

(V

=–60V

–50

=–6V

–1

CE

CE

B

=–4V)

=–2mA

=–4V)

C

E

=–1A

–100

(T

–2.5

–3

• • •

a

=25 C)

SD

159

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