BA479G Vishay, BA479G Datasheet - Page 2

• Manufacturer Part Number: BA479G
• Description: Rf Pin Diodes
• Manufacturer: Vishay

BA479G/BA479S
Vishay Semiconductors
Typical Characteristics
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Differential Forward Resistance vs. Forward Current
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2
Reverse impedance
Minority carrier lifetime
95 9735
95 9734
10000
1000
0.01
100
100
0.1
10
10
1
1
0.001
0
Parameter
T
amb
T
f > 20 MHz
= 25°C
0.4
I
j
F
0.01
= 25 ° C
- Forward Current ( mA )
V
F
- Forward Voltage ( V )
0.8
Scattering Limit
0.1
1.2
f = 100 MHz, V
I
F
= 10 mA, I
1
(T
1.6
amb
Test condition
= 25 °C unless otherwise specified)
2.0
10
R
= 10 mA
R
= 0
BA479G
BA479S
Fig. 3 Typ. Cross Modulation Distortion vs. Frequency f
Part
95 9733
-20
-40
-60
-80
20
0
f
0
2
Symbol
, modulated with 200 kHz, m = 100% (MHz)
z
z
τ
r
r
Π
- Circuit with 10 dB Attenuation
20
f
1
= 100 MHz unmodulated
Min
V
5
9
0
= 40 dBmV
40
Typ.
4
60
Document Number 85527
Rev. 1.5, 26-Apr-04
Max
80
VISHAY
2
Unit
kΩ
kΩ
µs