BAP50-02-N NXP Semiconductors, BAP50-02-N Datasheet - Page 4
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BAP50-02-N
Manufacturer Part Number
BAP50-02-N
Description
Bap50-02 General Purpose Pin Diode
Manufacturer
NXP Semiconductors
Datasheet
1.BAP50-02-N.pdf
(7 pages)
NXP Semiconductors
GRAPHICAL DATA
handbook, halfpage
handbook, halfpage
General purpose PIN diode
f = 100 MHz; T
(1) I
Diode inserted in series with a 50
biased via the analyzer Tee network.
T
Fig.4
s 21
amb
(dB)
( )
r D
Fig.2
10
10
F
10
= 25 C.
2
10
0
1
2
3
4
5
1
= 10 mA.
3
2
0.5
1
Insertion loss s
as a function of frequency; typical values.
Forward resistance as a function of
forward current; typical values.
j
= 25 C.
1
(2) I
1
1.5
F
(1)
(2)
(3)
21
= 1 mA.
2
of the diode in on-state
stripline circuit and
2
10
(3) I
I F (mA)
2.5
f (GHz)
F
MLD601
MLD603
= 0.5 mA.
10
3
Rev. 02 - 3 January 2008
2
handbook, halfpage
handbook, halfpage
Fig.5
f = 1 MHz; T
Diode zero biased and inserted in series with a 50
T
s 21
amb
(dB)
(fF)
600
400
200
C d
Fig.3
10
15
20
25
= 25 C.
2
0
0
5
0.5
0
Isolation ( s
function of frequency; typical values.
j
= 25 C.
Diode capacitance as a function of
reverse voltage; typical values.
4
1
21
2
1.5
8
) of the diode in off-state as a
12
2
Product specification
2.5
16
BAP50-02
V R (V)
f (GHz)
stripline circuit.
MLD602
MLD604
20
4 of 7
3