SS8P3C Vishay, SS8P3C Datasheet

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SS8P3C

Manufacturer Part Number
SS8P3C
Description
High Current Density Surface Mount Dual Common
Manufacturer
Vishay
Datasheet
Document Number: 89029
Revision: 22-Nov-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load per diode
Non-repetitive avalanche energy at 25 °C, I
Operating junction and storage temperature range
V
F
T
at I
V
I
J
I
F(AV)
E
FSM
RRM
max.
AS
F
= 4 A
K
Cathode
TO-277A (SMPC)
eSMP
K
Dual Common-Cathode Schottky Rectifier
TM
High Current Density Surface Mount
Series
Anode 1
Anode 2
A
= 25 °C unless otherwise noted)
2
AS
1
30 V, 40 V
2 x 4 A
150 °C
0.42 V
20 mJ
120 A
= 2 A per diode
total device
per diode
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
converters and polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability
grade (AEC Q101 qualified), meets JESD 201 class 2
whisker test
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
• Component in accordance to RoHS 2002/95/EC
peak of 260 °C
and WEEE 2002/96/EC
SYMBOL
T
V
J,
I
I
F(AV)
E
FSM
RRM
T
supplies,
AS
STG
Vishay General Semiconductor
SS8P3C
S83C
freewheeling
30
SS8P3C & SS8P4C
- 55 to + 150
120
20
8
4
SS8P4C
S84C
40
diodes,
www.vishay.com
UNIT
dc-to-dc
mJ
°C
V
A
A
1

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SS8P3C Summary of contents

Page 1

... HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test SYMBOL V total device I per diode = 2 A per diode SS8P3C & SS8P4C Vishay General Semiconductor supplies, freewheeling diodes, SS8P3C SS8P4C S83C S84C 30 40 RRM ...

Page 2

... SS8P3C & SS8P4C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Instantaneous forward voltage per diode (1) Reverse current per diode Typical junction capacitance per diode Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode Note: (1) Units mounted on recommended P ...

Page 3

... Revision: 22-Nov-07 1000 100 10 0.6 0.7 0.8 0.1 Figure 5. Typical Junction Capacitance Per Diode 100 100 0.01 Figure 6. Typical Transient Thermal Impedance Per Diode SS8P3C & SS8P4C Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) Junction to Ambient 0 Pulse Duration (s) www ...

Page 4

... SS8P3C & SS8P4C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) www.vishay.com 4 0.187 (4.75) 0.175 (4.45) K 0.026 (0.65) NOM 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.268 (6.80) 0.030 (0.75) NOM. ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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