V12P12 Vishay, V12P12 Datasheet - Page 3
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V12P12
Manufacturer Part Number
V12P12
Description
High Current Density Surface Mount Trench Mos Barrier Schottky Rectifier
Manufacturer
Vishay
Datasheet
1.V12P12.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
V12P12-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
V12P12-M3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
V12P12-M3/86A
Manufacturer:
Vishay Semiconductors
Quantity:
1 979
RATINGS AND CHARACTERISTICS CURVES
Document Number: 89094
Revision: 29-Jul-08
(T
A
Figure 3. Typical Instantaneous Forward Characteristics
= 25 °C unless otherwise noted)
0.01
100
Figure 1. Maximum Forward Current Derating Curve
0.1
14
12
10
11
10
10
8
6
4
2
0
9
8
7
6
5
4
3
2
0
1
1
100
0
0
Figure 2. Forward Power Loss Characteristics
T
at the Cathode Band Terminal
Resistive or Inductive Load
L
0.1
Measured
T
2
A
Instantaneous Forward Voltage (V)
110
= 125 °C
0.2
D = 0.1
Average Forward Current (A)
Lead Temperature (°C)
0.3
4
D = 0.2
120
0.4
T
A
6
D = 0.3
T
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
= 150 °C
A
0.5
For technical questions within your region, please contact one of the following:
T
= 25 °C
A
= 100 °C
8
130
0.6
D = 0.5 D = 0.8
D = t
0.7
10
p
/T
140
0.8
T
12
D = 1.0
t
p
0.9
150
1.0
14
10 000
0.001
1000
0.01
100
100
100
0.1
10
10
10
1
1
0.01
0.1
10
Vishay General Semiconductor
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
Figure 5. Typical Junction Capacitance
Figure 6. Typical Junction Capacitance
20
T
30
A
0.1
= 25 °C
T
A
t - Pulse Duration (s)
Reverse Voltage (V)
40
= 150 °C
1
T
T
A
A
50
= 125 °C
= 100 °C
1
60
70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
80
= 50 mVp-p
90
www.vishay.com
V12P12
100
100
100
3