TISP3070H3 Bourns, Inc., TISP3070H3 Datasheet - Page 2

• Manufacturer Part Number: TISP3070H3
• Description: Tisp3070h3sll, Tisp3250h3sll, Tisp3290h3sll
• Manufacturer: Bourns, Inc.

Repetitive peak off-state voltage
Non-repetitive peak impulse current (see Notes 1, 2 and 3)
Non-repetitive peak on-state current (see Notes 1, 2 and 4)
Initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1. Initially the device must be in thermal equilibrium with T
dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85V
V
V
I
Absolute Maximum Ratings, T
Electrical Characteristics for the R and G or T and G Terminals, T
I
DRM
(BO)
V
(BO)
(BO)
I
I
H
D
T
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage wave shape, 8/20 µs current combination wave generator)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage waveshape)
0.2/310 µs (I 31-24, 0.5/700 µs voltage waveshape)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage waveshape)
5/320 µs (TIA-968-A, 9/720 µs voltage wave shape)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
20 ms, 50 Hz (full sine wave)
16.7 ms 60 Hz (full sine wave)
1000 s, 50 Hz a.c.
TISP3xxxH3SLL Overvoltage Protector Series
2. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T
3. Above 85 °C, derate linearly to zero at 150 °C lead temperature.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
Repetitive peak off-state current
Impulse breakover voltage
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
device returns to its initial conditions.
track widths. Derate current values at -0.61%/°C for ambient tempeartures above 25 °C.
Breakover voltage
Parameter
Breakover current
On-state voltage
Off-state current
Holding current
A
= 25 °C (Unless Otherwise Noted)
V
dv/dt = ±750 V/ms, R
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±750 V/ms, R
I
I
V
T
T
D
D
= ±5 A, t
= ±5 A, di/dt = ±30 mA/ms
= V
= ±50 V
Rating
DRM
w
= 100 µs
J
SOURCE
SOURCE
= 25 °C.
Test Conditions
A
= 300 Ω
= 300 Ω
= 25 °C (Unless Otherwise Noted)
Customers should verify actual device performance in their specific applications.
DRM
Specifications are subject to change without notice.
'3070
'3250
'3290
T
T
T
A
A
A
= 25 °C
= 85 °C
= 85 °C
'3070
'3250
'3290
'3070
'3250
'3290
Symbol
JANUARY 2005 - REVISED MAY 2007
V
I
di
PPSM
I
T
TSM
DRM
T
T
stg
/dt
J
±150
±150
Min Typ Max Unit
±5
-40 to +150
-65 to +150
Value
±190
±220
±500
±300
±250
±220
±200
±200
±200
±200
±160
±100
±58
400
55
60
1
±250
±290
±261
±302
±600
±600
±10
±70
±78
±10
±5
±3
kV/µs
Unit
A/µs
mA
mA
µA
µA
°C
°C
V
V
V
V
A
A