ST083S International Rectifier Corp., ST083S Datasheet - Page 3

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ST083S

Manufacturer Part Number
ST083S
Description
Inverter Grade Thyristors
Manufacturer
International Rectifier Corp.
Datasheet
Switching
(*) t
On-state Conduction
Triggering
V
Blocking
di/dt
t
dv/dt
I
I
t
P
P
I
+V
-V
I
V
I
V
V
V
r
r
I
I
T(TO)1
RRM
DRM
d
q
GM
GT
GD
H
L
t
t
GM
G(AV)
GT
GD
TM
T(TO)2
1
2
q
GM
GM
= 10 to 20µs for 400 to 800V devices; t
Previous Datasheet
Maximum peak gate power
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
Typical delay time
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
Parameter
Max. non-repetitive rate of rise
of turned-on current
Max. turn-off time (*)
Parameter
Max. peak on-state voltage
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum holding current
Typical latching current
Parameter
Parameter
q
= 15 to 30µs for 1000 to 1200V devices.
Min
ST083S
ST083S
10
ST083S
ST083S
1000
1.46
2.15
0.25
1.52
1000
200
2.32
2.34
600
500
0.80
40
20
30
20
3
5
5
5
Max
To Order
30
Index
Units
Units
Units
A/µs
Units
V/ s
m
mA
mA
mA
mA
µs
W
V
V
A
V
V
T
T
T
T
Conditions
T
I
T
Resistive load, Gate pulse: 10V, 5
T
V
available on request
Conditions
T
I
(16.7% x
(I >
(I >
T
T
Conditions
(16.7% x
T
T
Conditions
TM
TM
J
J
J
J
J
J
J
J
R
J
J
J
J
= 25°C, V
= T
= T
= 25°C, V
= T
= T
= T
= T
= T
= T
= 300A, T
= 50V, t
= 25°C, I
= 25°C, V
= 2 x di/dt
J
J
J
J
J
J
x I
x I
J
J
max, I
max, V
max, f = 50Hz, d% = 50
max, t
max, rated V
max., linear to 80% V
max, t
max, rated V
T(AV)
T(AV)
p
x I
DM
x I
= 200µs, dv/dt: see table in device code
A
), T
), T
J
T
p
p
T(AV)
TM
T(AV)
A
= 12V, Ra = 6
= T
DRM
= rated V
> 30A
= 12V, Ra = 6
J
J
= 100A, commutating di/dt = 10A/µs
Next Data Sheet
5ms
5ms
= T
= T
J
= rated V
< I <
< I <
max, t
DRM
DRM
J
J
max.
max.
DRM
/V
applied
p
x I
x I
RRM
= 10ms sine wave pulse
, I
DRM
T(AV)
T(AV)
DRM
TM
ST083S Series
applied
), T
), T
= 50A DC, t
, higher value
I
G
J
= 1A
J
source
= T
= T
J
J
max.
max.
p
= 1µs

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