TICP107 Bourns, Inc., TICP107 Datasheet
TICP107
Manufacturer Part Number
TICP107
Description
Silicon Controlled Rectifiers
Manufacturer
Bourns, Inc.
Datasheet
1.TICP107.pdf
(2 pages)
absolute maximum ratings over operating junction temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
JANUARY 1999 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 25°C ambient temperature (see Note 2)
Surge on-state current at (or below) 25°C ambient temperature (see Note 3)
Critical rate of rise of on-state current at 110°C (see Note 4)
Peak positive gate current (pulse width ≤ 300 µs)
Junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
●
●
●
●
●
●
●
R O D U C T
LP with fomed leads
1 A Continuous On-State Current
15 A Surge-Current
Glass Passivated Wafer
400 V to 600 V Off-State Voltage
I
di/dt 100A/µs
Package Options
GT
2. These values apply for continuous dc operation with resistive load.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
4. Rate of rise of on-state current after triggering with I
PACKAGE
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
50 µA min, 200 µA max
LP
I N F O R M A T I O N
Tape and Reel
PACKING
Bulk
RATING
PART # SUFFIX
(None)
R
G
= 10mA, di
GK
= 1 kΩ.
G
/dt = 1A/µs.
TICP107M
TICP107M
TICP107D
TICP107D
SILICON CONTROLLED RECTIFIERS
G
A
K
G
A
K
WITH FORMED LEADS
LP PACKAGE
LP PACKAGE
(TOP VIEW)
(TOP VIEW)
SYMBOL
I
T(RMS)
V
V
I
di/dt
T
I
TSM
DRM
RRM
GM
T
T
stg
L
J
TICP107 SERIES
-40 to +110
-40 to +125
2
VALUE
1
3
1
2
3
400
600
400
600
100
230
0.2
15
1
UNIT
MDC1AA
MDC1AB
A/µs
°C
°C
°C
V
V
A
A
A
1
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TICP107 Summary of contents
Page 1
... JANUARY 1999 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. SILICON CONTROLLED RECTIFIERS PART # SUFFIX (None) R RATING TICP107D TICP107M TICP107D TICP107M = 1 kΩ 10mA, di /dt = 1A/µ TICP107 SERIES LP PACKAGE (TOP VIEW PACKAGE WITH FORMED LEADS (TOP VIEW ...
Page 2
... TICP107 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C ambient temperature (unless otherwise noted ) PARAMETER Repetitive peak rated V DRM D off-state current Repetitive peak rated V RRM R reverse current I Gate trigger current Gate trigger voltage Holding current ...